Transistor action in Si/CoSi2/Si heterostructures

Hensel, J. C.; Levi, A. F. J.; Tung, R. T.; Gibson, J. M.
July 1985
Applied Physics Letters;7/15/1985, Vol. 47 Issue 2, p151
Academic Journal
We report transistor action in a Si/CoSi[sub 2]/Si structure. The thin silicide layer (<100 Ã…), which acts as the base, is a single-crystal metal, essentially continuous and locally exhibiting atomically perfect interfaces with Si. The transistor action is manifested by a common base current gain a as high as 0.6 and a voltage gain greater than 10.


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