Si-on-insulator films of high crystal perfection by zone melting under a SiO2 cap provided with vent openings

Pfeiffer, Loren; Kovacs, T.; West, K. W.
July 1985
Applied Physics Letters;7/15/1985, Vol. 47 Issue 2, p157
Academic Journal
We observe a marked improvement in the crystal perfection of zone melted thick Si-on-insulator films that were prepared for melt processing by etching an array of openings in the SiO[sub 2] capping layer. Chemical defect etching and Rutherford backscattering measurements reflect this improvement, which we believe is due to the creation of new venting paths that reduce the level of excess dissolved SiO[sub 2] in the molten Si before recrystallization.


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