TITLE

Si-on-insulator films of high crystal perfection by zone melting under a SiO2 cap provided with vent openings

AUTHOR(S)
Pfeiffer, Loren; Kovacs, T.; West, K. W.
PUB. DATE
July 1985
SOURCE
Applied Physics Letters;7/15/1985, Vol. 47 Issue 2, p157
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We observe a marked improvement in the crystal perfection of zone melted thick Si-on-insulator films that were prepared for melt processing by etching an array of openings in the SiO[sub 2] capping layer. Chemical defect etching and Rutherford backscattering measurements reflect this improvement, which we believe is due to the creation of new venting paths that reduce the level of excess dissolved SiO[sub 2] in the molten Si before recrystallization.
ACCESSION #
9817810

 

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