TITLE

Wide gap II-VI superlattices of ZnSe-Zn1-xMnxSe

AUTHOR(S)
Kolodziejski, L. A.; Gunshor, R. L.; Bonsett, T. C.; Venkatasubramanian, R.; Datta, S.; Bylsma, R. B.; Becker, W. M.; Otsuka, N.
PUB. DATE
July 1985
SOURCE
Applied Physics Letters;7/15/1985, Vol. 47 Issue 2, p169
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In this letter we report the first growth of wide gap II-VI semiconductor superlattices of Zn[sub 1-x]Mn[sub x]Se (0 < x < 0.51). The superlattices are grown by molecular beam epitaxy. Bulk crystals of Zn[sub 1-x]Mn[sub x]Se (0 < x < 0.57) grown in the past have shown a predominance of the zincblende phase only up to x = 0.3; above this mole fraction a predominance of the hexagonal phase is observed. For the superlattices and epilayers reported here, only the zincblende phase (100) is present over the entire composition range investigated. Transmission electron microscopy shows clear evidence of the superlattice structure. Photoluminescence measurements of ZnSe epilayers show a dominant free-exciton feature while the Zn[sub 1-x]Mn[sub x]Se epilayers exhibit two distinct photoluminescence peaks. The relative intensities of band-to-band transitions and Mnrelated transitions are somewhat comparable for the epilayers. However, the superlattices having ZnSe in the wells show virtually no Mn-related emission regardless of the mole fraction of Mn in the barrier layers indicating significant carrier confinement. The intensity of the band-to-band emission is two orders of magnitude more intense for the supertattices than the ZnSe epilayer at 6.5 K. The superlattices show a red shift of the photoluminescence peak which can be explained in terms of shifts in the band gaps due to the presence of strains.
ACCESSION #
9817804

 

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