Growth of high quality epitaxial PbSe onto Si using a (Ca,Ba)F2 buffer layer

Zogg, H.; Hüppi, M.
July 1985
Applied Physics Letters;7/15/1985, Vol. 47 Issue 2, p133
Academic Journal
Epitaxial layers of PbSe have been grown onto Si(111) by vacuum deposition techniques using a (Ca, Ba)F[sub 2] buffer film. For lattice match, the buffer layer is graded with CaF[sub 2] at the Si interface and BaF[sub 2] at the PbSe interface. Like bulk BaF[sub 2], this buffer layer forms a suitable support for the growth of high quality PbSe. The layers grown exhibit smooth surfaces and mobilities as high as those of bulk PbSe, i.e., ˜3 × 10[sup 4] cm[sup 2] V[sup -1] s[sup -1] at 77 K and >1.2 × 10[sup 5] cm² V[sup -1] s[sup -1] below 20 K. These results are very promising for the fabrication of heteroepitaxial monolithic integrated circuits, with, for example, photovoltaic (Pb,Sn) (S,Se,Te) narrow gap semiconductor infrared detectors on silicon.


Related Articles

  • Dislocation constrictions at a Si/SixGe1-x interface. Rajan, Krishna // Applied Physics Letters;9/10/1990, Vol. 57 Issue 11, p1135 

    Direct evidence of the constriction of dissociated partial dislocations at SiGe epitaxial interfaces is presented for the first time. The spacing between the dislocation constrictions is similar to that observed in deformed in bulk silicon. The importance of these observations to the...

  • Investigation of the Structure of (p)3C-SiC–(n)6H-SiC Heterojunctions. Lebedev, A. A.; Mosina, G. N.; Nikitina, I. P.; Savkina, N. S.; Sorokin, L. M.; Tregubova, A. S. // Technical Physics Letters;Dec2001, Vol. 27 Issue 12, p1052 

    The structure of (p)3C-SiC-(n)6H-SiC epitaxial structures obtained by sublimation epitaxy in vacuum on 6H-SiC substrates was studied by methods of X-ray topography, X-ray diffraction, and transmission electron microscopy. The results showed high structure perfection in the epitaxial layers of...

  • Formation of epitaxial yttrium silicide on (111) silicon. Siegal, Michael P.; Kaatz, Forrest H.; Graham, William R.; Santiago, Jorge J.; Van der Spiegel, Jan // Journal of Applied Physics;10/1/1989, Vol. 66 Issue 7, p2999 

    Studies the growth of epitaxial yttrium silicide on silicon (111) in ultrahigh vacuum. Resistivity, epitaxial quality and pinhole coverages for each growth method used; Significance of epitaxial metal silicide-silicon interfaces; Reaction between an Y overlayer and a silicon (111) substrate.

  • Defect Formation in Ge1 – xSix/Ge(111) Epitaxial Heterostructures. Yugova, T. G.; Mil'vidskii, M. G.; Vdovin, V. I. // Physics of the Solid State;Aug2004, Vol. 46 Issue 8, p1520 

    Selective chemical etching and transmission electron microscopy are used to study the defect formation in Ge1 – xSix/Ge(111) epitaxial heterostructures at 0.01 < x < 0.35. As the Si content in the solid solution (SS) increases, the dislocation densities in the epitaxial layer, at the...

  • Structure imaging of commensurate GexSi1-x/Si(100) interfaces and superlattices. Hull, R.; Gibson, J. M.; Bean, J. C. // Applied Physics Letters;1/15/1985, Vol. 46 Issue 2, p179 

    High resolution electron microscopy is used to study interfacial quality in commensurate GexSi1-x systems grown by molecular beam epitaxy. Structure images of interfaces have been obtained, yielding atomic-scale information about sharpness and smoothness. From careful consideration of image...

  • The interfacial layer formation of the Al2O3/Si structures grown by low-pressure metalorganic chemical vapor deposition. Kim, T. W.; Kang, W. N.; Yoon, Y. S.; Yom, S. S.; Lee, J. Y.; Kim, Chayeon; Lim, H.; Park, H. L. // Journal of Applied Physics;7/1/1993, Vol. 74 Issue 1, p760 

    Studies the interfacial layer formation of the Al[sub2]O[sub3]/silicon structures grown by low-pressure metalorganic chemical vapor deposition. Interface state densities at the Al[sub2]O[sub3]/silicon interface; Significance of the growth of epitaxial insulator films on silicon; Auger depth...

  • Low temperature growth of homoepitaxial film on Si substrate cleaned in-situ by ECR hydrogen plasma. Kim, H. W.; Hwang, W. S.; Lee, C.; Reif, R. // Journal of Materials Science Letters;Jul2003, Vol. 22 Issue 13, p939 

    Examines the low temperature growth of homoepitaxial layer on silicon substrate. Use of low temperature in-situ cleaning to reduce the interfacial contaminants; Oxygen concentration at the interface; Measurement of the thickness of the silicon epitaxial layers.

  • Study on the Interface Structure: Diamond Thin Film Epitaxy on (001) Silicon Substrate. Meng, Q. B.; Fei, Y. J.; Kang, J.; Xiong, Y. Y.; Lin, Z. D.; Feng, Ke-an; Wu, Z. J.; Zhang, S. Y. // Modern Physics Letters B;2/10/99, Vol. 13 Issue 3/4, p125 

    An interesting interface structure between diamond film and silicon substrate has been observed. That is, according to the deformation of the diamond film crystal sturcture, a strictly 3:2 matching of the two lattices across the interface is obtained. This result clearly indicates that misfit...

  • Electrical properties of low-temperature-growth CaF[sub 2] on Si(111). Cho, C.-C.; Kim, T.S. // Applied Physics Letters;1/20/1992, Vol. 60 Issue 3, p338 

    Examines the growth of low temperature-epitaxial calcium fluoride (CaF[sub 2]) films on silicon using molecular beam epitaxy. Observation of x-ray rocking curves of CaF[sub 2] in CaF[sub 2]/Si samples; Influence of thermal history on CaF[sub 2] capacitor; Predominance of Ca-Si bonds in CaF[sub...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics