Growth of high quality epitaxial PbSe onto Si using a (Ca,Ba)F2 buffer layer

Zogg, H.; Hüppi, M.
July 1985
Applied Physics Letters;7/15/1985, Vol. 47 Issue 2, p133
Academic Journal
Epitaxial layers of PbSe have been grown onto Si(111) by vacuum deposition techniques using a (Ca, Ba)F[sub 2] buffer film. For lattice match, the buffer layer is graded with CaF[sub 2] at the Si interface and BaF[sub 2] at the PbSe interface. Like bulk BaF[sub 2], this buffer layer forms a suitable support for the growth of high quality PbSe. The layers grown exhibit smooth surfaces and mobilities as high as those of bulk PbSe, i.e., ˜3 × 10[sup 4] cm[sup 2] V[sup -1] s[sup -1] at 77 K and >1.2 × 10[sup 5] cm² V[sup -1] s[sup -1] below 20 K. These results are very promising for the fabrication of heteroepitaxial monolithic integrated circuits, with, for example, photovoltaic (Pb,Sn) (S,Se,Te) narrow gap semiconductor infrared detectors on silicon.


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