Luminescence in ion-implanted In0.53Ga0.47As

Shah, Jagdeep; Tell, B.; Bridges, T. J.; Burkhardt, E. G.; DiGiovanni, A. E.; Brown-Goebeler, K.
July 1985
Applied Physics Letters;7/15/1985, Vol. 47 Issue 2, p146
Academic Journal
We report luminescence studies of In[sub 0.53] Ga[sub 0.47] As implanted with Ar, Be, Se, and Si at doses ranging from 5 × 10[sup 10] to 2.5 × 10[sup 12] cm[sup -2]. A new feature in the luminescence spectrum, identified as emission from an exciton-neutral acceptor complex, appears at Be doses in excess of 5 × 10[sup 11] cm[sup -2]. We employ a rapid thermal annealing procedure, which produces no degradation in the luminescence properties of unimplanted samples but is very effective in removing the damage introduced by ion implantation of light and medium mass species (Be, Ar, and Si). Implantation of donors and of electrically inactive Ar introduces no new features in the observed spectra.


Related Articles

  • Anomalous behavior of ion-implanted GaSb. Callec, R.; Favennec, P.N.; Salvi, M.; L'Haridon, H. // Applied Physics Letters;10/7/1991, Vol. 59 Issue 15, p1872 

    Investigates the swelling phenomenon of ion-implanted gallium antimonide layers. Relation of the phenomenon to the formation of a porous layer; Factors influencing the formation of the porous layer; Similarity of behavior to indium antimonide.

  • Electrical isolation of n- and p-In[sub 0.53]Ga[sub 0.47]As epilayers using ion irradiation. Carmody, C.; Tan, H. H.; Jagadish, C. // Journal of Applied Physics;11/15/2003, Vol. 94 Issue 10, p6616 

    A study of the evolution of sheet resistance of p- and n-type In[sub 0.53]Ga[sub 0.47]As epilayers during O, C, Li, and H irradiation was conducted. The threshold dose at which the material becomes highly resistive increased upon decreasing the mass of the implanted ion, was higher for n-InGaAs...

  • Defect-enhanced interdiffusion at the InGaAs/InAlAs interface due to Si ion implantation. Yamamura, Shin’ichi; Saito, Riichiro; Yugo, Shigemi; Kimura, Tadamasa; Murata, Michio; Kamiya, Takeshi // Journal of Applied Physics;3/1/1994, Vol. 75 Issue 5, p2410 

    Studies the interdiffusion at indium gallium arsenide (InGaAs)/indium aluminum arsenide interfaces which are implanted with silicon ions. Well widths of InGaAs layers; Causes that are considered for the enhanced intermixing of heterointerface due to ion implantation and annealing; Diffusion...

  • Optical properties of silicon nanoclusters fabricated by ion implantation. Shimizu-Iwayama, Tsutomu; Kurumado, Norihiro; Hole, David E.; Townsend, Peter D. // Journal of Applied Physics;6/1/1998 Part 1 of 2, Vol. 83 Issue 11, p6018 

    Provides information on a study which developed a method used to fabricate luminescent silicon nanoclusters in SiO2 matrix, with the usage of ion implantation. Measurement of the annealing time dependence in relation to the silicon nanoclusters' photoluminescence; Production of nanoclusters;...

  • Ionic Synthesis of Ga1–xInxAs Solid Solution Films. Ardyshev, M. V.; Pichugin, V. F. // Russian Physics Journal;Feb2004, Vol. 47 Issue 2, p175 

    The Ga1-xInxAs compound obtained by In-ion implantation (100 keV and (0.45-6) ·1017 cm-2) followed by thermal (800 °C and 15') or high-energy electron-beam (1 MeV, 0.6 mA·cm-2, 660 °C, and 16 s) annealing is investigated by Rutherford backscattering, optical absorption, and capacitor...

  • Resistance and mobility changes in InGaAs produced by light ion bombardment. Tell, B.; Brown-Goebeler, K. F.; Bridges, T. J.; Burkhardt, E. G. // Journal of Applied Physics;7/15/1986, Vol. 60 Issue 2, p665 

    Presents information on a study which measured sheet resistance and mobility changes for a series of indium gallium arsenide layers as a result of hydrogen, boron, and beryllium implantation. Formation of high resistivity layers by radiation damage has proved particularly useful in gallium...

  • Donor generation from native defects induced by In+ implantation into tin-doped indium oxide. Haynes, Tony E.; Shigesato, Yuzo // Journal of Applied Physics;3/15/1995, Vol. 77 Issue 6, p2572 

    Presents a study which described the mechanism for the implantation-induced changes in the conductivity and optical properties of tin-doped indium oxide semiconductor films. Experimental description of the thin films; Electrical properties of the thin films; Mechanisms of conductivity...

  • Rapid thermal annealing of Sn-implanted InP. Ridgway, M. C.; Kringho\j, P. // Journal of Applied Physics;3/15/1995, Vol. 77 Issue 6, p2375 

    Presents a study which investigated the rapid thermal annealing of tin-implated InP substrates. Methodology; Results and discussion; Conclusions.

  • High-quality Si-implanted In...Ga...As epitaxial layers and their application to n... p junction devices. Blanco, M. N.; Redondo, E. // Journal of Applied Physics;4/1/2000, Vol. 87 Issue 7, p3478 

    Presents information on a study which investigated the electrical and optical characteristics of silicon-implanted indium-gallium arsenide and their application to n p junction devices. Effects of implantation and annealing parameters on the current-voltage characteristics of n p junctions;...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics