TITLE

Luminescence in ion-implanted In0.53Ga0.47As

AUTHOR(S)
Shah, Jagdeep; Tell, B.; Bridges, T. J.; Burkhardt, E. G.; DiGiovanni, A. E.; Brown-Goebeler, K.
PUB. DATE
July 1985
SOURCE
Applied Physics Letters;7/15/1985, Vol. 47 Issue 2, p146
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report luminescence studies of In[sub 0.53] Ga[sub 0.47] As implanted with Ar, Be, Se, and Si at doses ranging from 5 × 10[sup 10] to 2.5 × 10[sup 12] cm[sup -2]. A new feature in the luminescence spectrum, identified as emission from an exciton-neutral acceptor complex, appears at Be doses in excess of 5 × 10[sup 11] cm[sup -2]. We employ a rapid thermal annealing procedure, which produces no degradation in the luminescence properties of unimplanted samples but is very effective in removing the damage introduced by ion implantation of light and medium mass species (Be, Ar, and Si). Implantation of donors and of electrically inactive Ar introduces no new features in the observed spectra.
ACCESSION #
9817780

 

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