Effect of oxygen-implant isolation on the recombination leakage current of n-p+ AlGaAs graded heterojunction diodes

Watanabe, Kazuo; Nagata, Koichi; Yamazaki, Hajime; Ishida, Satoru; Ichijo, Takehisa
October 1990
Applied Physics Letters;10/29/1990, Vol. 57 Issue 18, p1892
Academic Journal
The recombination leakage current induced by planar isolation of n-p+AlGaAs graded heterojunction area with oxygen ion implantation followed by annealing at 500–650 °C has been investigated. The recombination leakage current is smaller than that induced by conventional isolation with hydrogen ion implantation; specifically, it is about one order of magnitude smaller after the higher temperature (600–650 °C) annealing. The main origin of the remaining recombination leakage current is probably not oxygen deep levels but rather recombination centers related to the ion implantation damage that remains after annealing. A point-defect complex level, which may be related to the recombination center, is detected at an activation energy of around 0.8 eV by deep level transient spectroscopy.


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