TITLE

Morphological phases of tungsten thin films on gallium arsenide

AUTHOR(S)
Derkits, Gustav E.; Harbison, J. P.; Hwang, D. M.
PUB. DATE
July 1985
SOURCE
Applied Physics Letters;7/1/1985, Vol. 47 Issue 1, p19
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Tungsten thin layers deposited on GaAs single crystal substrates in ultrahigh vacuum display a variety of distinct morphologies depending on substrate temperature and metal layer thickness. We present a preliminary study of some of these structures, including boundary layers in the metal, columnar growth, and an unusual phase that shows a strong orientational correlation with the substrate. We also discuss the effects of these structures on applications of W metallization to devices and processes of III-V semiconducting compounds.
ACCESSION #
9817771

 

Related Articles

  • Planarization of epitaxial GaAs overgrowth over tungsten wires. Wernersson, Lars-Erik; Georgsson, Kristina; Litwin, Andrej; Samuelson, Lars; Seifert, Werner // Journal of Applied Physics;1/1/1996, Vol. 79 Issue 1, p500 

    Focuses on a study which examined the epitaxial overgrowth of thin gallium arsenide over tungsten wires. Description of procedure; Investigation of the planarization of the growth front over the grating; Factors that were important for rapid planarization of the overgrowth for given epitaxial...

  • Molecular beam epitaxial growth of tungsten layers embedded in single crystal gallium arsenide. Harbison, J. P.; Hwang, D. M.; Levkoff, J.; Derkits, G. E. // Applied Physics Letters;12/1/1985, Vol. 47 Issue 11, p1187 

    We have been able to fabricate structures which consist of a thin (∼10 nm) polycrystalline W film embedded in surrounding single crystalline GaAs by molecular beam epitaxy (MBE) using an electron beam evaporation source to deposit W metal in an ultrahigh vacuum MBE growth chamber. The...

  • Transistor action in novel GaAs/W/GaAs structures. Derkits, G. E.; Harbison, J. P.; Levkoff, J.; Hwang, D. M. // Applied Physics Letters;5/5/1986, Vol. 48 Issue 18, p1220 

    Structures containing thin polycrystalline layers of W embedded in essentially single crystal GaAs have been grown by molecular beam epitaxy. The W layers exhibit resistivities of 90–300 μΩ cm and Schottky barriers to both substrate and overgrown GaAs. The structures can act as...

  • Structural and photocurrent-voltage characteristics of tungsten oxide thin films on p -GaAs. Ki Hyun Yoon; Jeong Won Lee // Applied Physics Letters;1/22/1996, Vol. 68 Issue 4, p572 

    Investigates the structural, electrical, and photoelectro-chemical properties of tungsten oxide thin films deposited on gallium arsenide. Measurement of electrical resistivity; Effectivity of tungsten oxide in absorbing a large portion of the solar spectrum; Crystallization of the monoclinic...

  • High-temperature annealing characteristics of tungsten and tungsten nitride Schottky contacts to GaAs under different annealing conditions. Yu, Kin Man; Jaklevic, J. M.; Haller, E. E.; Cheung, S. K.; Kwok, P. S. // Journal of Applied Physics;8/1/1988, Vol. 64 Issue 3, p1284 

    Presents a study which investigated the structural and electrical characteristics of thin-film tungsten and reactively sputtered tungsten nitride Schottky contacts to gallium arsenide under different annealing conditions. Experimental details; Results and discussion; Conclusion.

  • Investigation of deep electronic centers in low-temperature grown GaAs using extremely thin layers. Pfeiffer, K.-F. G.; Tautz, S.; Kiesel, P.; Steen, C.; Malzer, S.; Do¨hler, G. H. // Applied Physics Letters;10/9/2000, Vol. 77 Issue 15 

    We report on an approach to investigate the deep electronic defect centers in low-temperature grown GaAs (LT-GaAs). Using an extremely thin LT-GaAs layer (comparable with the penetration depth of an electric field in bulk material) incorporated in the i layer of a p-i-n diode, we are able to...

  • The deposition of a GaS epitaxial film on GaAs using an exchange reaction. Xin, Q.-S.; Conrad, S.; Zhu, X.-Y. // Applied Physics Letters;8/26/1996, Vol. 69 Issue 9, p1244 

    A GaS thin film has been formed epitaxially on GaAs(100) using a photoassisted growth-etching reaction between H2S and the GaAs substrate. In the reaction, the growth of GaS is accomplished via the replacement of As in the GaAs lattice by the photochemically generated S atom, while As is etched...

  • Bond-length strain in buried Ga[sub 1-x]In[sub x]As thin-alloy films grown coherently on InP(001). Woicik, J. C.; Gupta, J. A.; Watkins, S. P.; Crozier, E. D. // Applied Physics Letters;8/31/1998, Vol. 73 Issue 9 

    The bond lengths in a series of strained, buried Ga[sub 1-x]In[sub x]As thin-alloy films grown coherently on InP(001) have been determined by high-resolution extended x-ray absorption fine-structure measurements. Comparison with a random-cluster calculation demonstrates that the external...

  • The anomalous bandgap bowing in GaAsN. Tisch, U.; Finkman, E.; Salzman, J. // Applied Physics Letters;7/15/2002, Vol. 81 Issue 3, p463 

    The composition dependence of the fundamental bandgap of thin, pseudomorphic GaAs[sub 1-x]N[sub x] layers (0≤x≤5%) on GaAs substrates is studied by optical transmission measurements and high resolution x-ray diffraction. We present a very large set of consistent experimental data. An...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics