A photoluminescence study of molecular beam epitaxy grown CdTe films on (001)InSb substrates

Feng, Z. C.; Mascarenhas, A.; Choyke, W. J.; Farrow, R. F. C.; Shirland, F. A.; Takei, W. J.
July 1985
Applied Physics Letters;7/1/1985, Vol. 47 Issue 1, p24
Academic Journal
The radiative defect density ρ, as determined by high-resolution, low-temperature photoluminescence, was determined for 11 single crystal films of CdTe grown by molecular beam epitaxy on (001) InSb in the temperature interval 170–285 °C. A minimum of 0.6% is found for ρ near 185 °C as compared to 2.5% for the best previously reported value, indicating a high degree of perfection for our films. X-ray double-crystal rocking curves have also been obtained for these films, and a minimum in the full width at half-maximum is also found in the neighborhood of 185 °C.


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