NpnN double-heterojunction bipolar transistor on InGaAsP/InP

Su, L. M.; Grote, N.; Kaumanns, R.; Schroeter, H.
July 1985
Applied Physics Letters;7/1/1985, Vol. 47 Issue 1, p28
Academic Journal
Double-heterojunction bipolar transistors have been fabricated on InGaAs(P)/InP with current gains of up to 200. Transistors with a p+-InGaAs/N-InP base/collector junction exhibited drastic gain reduction at low collector bias voltages which is ascribed to the electron repelling effect of the conduction-band spike formed at the collector heterojunction. To overcome this complication a thin n-InGaAs transition layer was inserted between the ternary base and the InP wide-gap collector. The resulting nN double-layer collector structure leads to excellent current/voltage characteristics.


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