TITLE

Stresses in the InP/Ti/Pt and InP/SiO2/Ti/Pt multilayer systems

AUTHOR(S)
Dautremont-Smith, W. C.; Woelfer, S. M.
PUB. DATE
July 1985
SOURCE
Applied Physics Letters;7/1/1985, Vol. 47 Issue 1, p31
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The contact metallization of 1000 Å Ti followed by 1500 Å Pt deposited by rf diode sputtering onto InP is found to be of very low stress, as has previously been reported for this metallization on GaAs. This is due to the effect of compressive stress in the Ti film being compensated by tensile stress in the Pt film. However, when Ti is deposited onto SiO2 coated InP, its stress changes sign, becoming highly tensile, of magnitude ∼1×1010 dyne cm-2. Thus its effect becomes additive to that of the Pt film, producing an effective stress in the Ti/Pt bilayer of ∼7×109 dyne cm-2 tensile. Due to moderately low compressive stress in the SiO2, the effective resultant stress for the multilayer of (3000 Å SiO2/Å Ti/1500 Å Pt) on InP(100) remains tensile, of magnitude 1.7×109 dyne cm-2. The origin of the stress reversal in the Ti film appears to be its mode of nucleation and growth, as opposed to the formation of a highly stressed interfacial compound layer.
ACCESSION #
9817763

 

Related Articles

  • A double metal structure Pt/Al/n-InP diode. Huang, Wen-Chang; Lei, Tan-Fu; Lee, Chung-Len // Journal of Applied Physics;7/1/1995, Vol. 78 Issue 1, p291 

    Discusses a high performance double metal structure, platinum/aluminum/n-indium phosphide diode. Diode fabrication and measurement; Factor to which the high barrier height of the diode is attributed; Description of the diode.

  • Electronic and optical properties of Ti-doped GaAs and InP; semi-insulating InP. Brandt, C. D.; Hennel, A. M.; Bryskiewicz, T.; Ko, K. Y.; Pawlosicz, L. M.; Gatos, H. C. // Journal of Applied Physics;5/1/1989, Vol. 65 Issue 9, p3459 

    Focuses on a study which examined the effects of titanium (Ti) doping on the electrical and optical properties of gallium arsenide and indium phosphide (InP) employing both melt and solution-grown crystals. Methodology of the study; Analysis of results; Formulation for producing semi-insulating...

  • Study of Ni as a barrier metal in AuSn soldering application for laser chip/submount assembly. Lee, C. H.; Wong, Y. M.; Doherty, C.; Tai, K. L.; Lane, E.; Bacon, D. D.; Baiocchi, F.; Katz, A. // Journal of Applied Physics;10/15/1992, Vol. 72 Issue 8, p3808 

    Presents a study which investigated the possibility of replacing platinum in the titanium/platinum/gold base and traditionally used metallurgical structure by nickel, while bonding indium phosphide laser chip to a subamount with AuSn solder. Results of scanning electron microscopy analysis;...

  • Titanium-doped semi-insulating InP grown by the liquid encapsulated Czochralski method. Iseler, G. W.; Ahern, Brian S. // Applied Physics Letters;6/16/1986, Vol. 48 Issue 24, p1656 

    Semi-insulating crystals of InP with resistivities of 1–3×106 Ω cm have been grown by the liquid encapsulated Czochralski method from melts co-doped with Ti, a deep donor located 0.62±0.02 eV below the conduction band, and either Zn, Cd, or Be. This technique should make it...

  • Investigations of InP:Ti grown by metalorganic vapor phase epitaxy. Ottenwalder, D.; Scholz, F. // Applied Physics Letters;3/9/1992, Vol. 60 Issue 10, p1259 

    Examines the epitaxial growth of titanium doped indium phosphide layers. Investigation of the internal three dimensional-transitions of Ti[sub 3+]; Confirmation on the substitutional incorporation of titanium in indium phosphide; Limitation of the electrically active titanium concentration.

  • Pt/Ti/n-InP nonalloyed ohmic contacts formed by rapid thermal processing. Katz, A.; Weir, B. E.; Chu, S. N. G.; Thomas, P. M.; Soler, M.; Boone, T.; Dautremont-Smith, W. C. // Journal of Applied Physics;4/15/1990, Vol. 67 Issue 8, p3872 

    Presents a study which examined the microstructure and electrical nature of the plutonium/titanium/n-indium phosphide nonalloyed ohmic contacts. Experimental procedure; Results and discussion; Conclusions.

  • Interfacial reactions in Pt/InP contacts. Mohney, S. E.; Chang, Y. A. // Journal of Applied Physics;10/1/1993, Vol. 74 Issue 7, p4403 

    Presents a study that examined interfacial reactions in platinum/indium phosphide contacts by transmission electron microscopy and Auger depth profiling. Methods used for the preparation of the films; Summary of the phase formation for the films; Schematic drawing of the reaction products...

  • New semi-insulating InP: Titanium midgap donors. Brandt, C. D.; Hennel, A. M.; Pawlowicz, L. M.; Wu, Y.-T.; Bryskiewicz, T.; Lagowski, J.; Gatos, H. C. // Applied Physics Letters;4/28/1986, Vol. 48 Issue 17, p1162 

    Deep levels due to titanium were identified for the first time in InP and GaAs employing capacitance transients and optical absorption measurements. They were found to be Ti4+/Ti3+ donor levels at energies of 0.63±0.03 eV and 1.00±0.03 eV in InP and GaAs, respectively. The near midgap...

  • Fe and Ti doping of InP grown by metalorganic chemical-vapor deposition for the fabrication of thermally stable high-resistivity layers. Wolf, T.; Zinke, T.; Krost, A.; Scheffler, H.; Ullrich, H.; Bimberg, D.; Harde, P. // Journal of Applied Physics;4/15/1994, Vol. 75 Issue 8, p3870 

    Focuses on a study which investigated the optimum conditions for the fabrication of semi-insulating indium phosphide (InP) epitaxial layers grown by metalorganic chemical-vapor deposition (MOCVD). Description of the MOCVD growth of iron and titanium doped InP; Investigation of the electrical...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics