TITLE

Tungsten-platinum alloy Schottky barriers on n-type GaAs

AUTHOR(S)
Okumura, T.; Tu, K. N.
PUB. DATE
July 1985
SOURCE
Applied Physics Letters;7/1/1985, Vol. 47 Issue 1, p42
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Alloys of tungsten and platinum were studied as a Schottky contact material on n-type GaAs. Schottky barrier heights for two alloy compositions, W50Pt50 and W80Pt20, were measured by current-voltage, capacitance-voltage, and photoresponse techniques of the barrier heights. The values of the barrier heights from the latter two techniques were 0.90±0.02 eV and did not change with annealing at 350 °C for 20 h. However, the value from the I-V technique changed from about 0.6 to 0.7 eV upon annealing. The W50Pt50 alloy was found to be more stable than the W80Pt20 alloy on GaAs.
ACCESSION #
9817756

 

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