Growth of high quality GaInAs on InP buffer layers by metalorganic chemical vapor deposition

Chan, K. T.; Zhu, L. D.; Ballantyne, J. M.
July 1985
Applied Physics Letters;7/1/1985, Vol. 47 Issue 1, p44
Academic Journal
The uninterrupted growth of high quality GaInAs layers on InP buffers by atmospheric pressure metalorganic chemical vapor deposition using trimethylindium is reported. A lattice mismatch smaller than 4.3×10-4 and low-temperature photoluminescence exciton linewidth of 2.6 meV have been obtained, along with best 300-K, 77-K, and 4.2-K Hall mobilities of 11 200, 64 000, and 80 000 cm2/Vs, respectively. Such high mobility values at 4.2 K are explained by the existence of a two-dimensional electron gas and demonstrate the superior quality of the GaInAs epilayers grown in our laboratory.


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