Very high mobility InP grown by low pressure metalorganic vapor phase epitaxy using solid trimethylindium source

Zhu, L. D.; Chan, K. T.; Ballantyne, J. M.
July 1985
Applied Physics Letters;7/1/1985, Vol. 47 Issue 1, p47
Academic Journal
Growth of very high quality unintentionally doped InP by low pressure metalorganic vapor phase epitaxy using solid trimethylindium as the indium source is described. Hall mobilities of 5370 cm2/Vs (300 K) and 131 600 cm2/Vs (77 K) with residual carrier concentration of 2.5×1014 cm-3 have been obtained. Low-temperature photoluminescence exciton spectra revealed that the neutral acceptor-bound-exciton emission was hardly observable, indicating a very low compensation ratio.


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