Dependence of radiation-induced interface traps on gate electrode material in metal/SiO2/Si devices

Zekeriya, Viktor; Ma, T-P.
July 1985
Applied Physics Letters;7/1/1985, Vol. 47 Issue 1, p54
Academic Journal
The density of radiation-induced interface traps in a metal-oxide-semiconductor (MOS) device has been found to depend on the electrode material used to form the gate. For a given oxide process, this dependence correlates well with the gate-induced interfacial stress distribution in the MOS system. The gate-induced bond strain gradient model that we proposed previously may be readily used to explain the results.


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