High intensity submillimeter photoresponse of a Si inversion layer

Verma, I. B.; Leung, M.; Drew, H. D.; Doezema, R. E.; Furneaux, J. E.; Wagner, R. J.
July 1985
Applied Physics Letters;7/1/1985, Vol. 47 Issue 1, p57
Academic Journal
The submillimeter wave (496, 385, and 66 μm) photoresponse has been measured in an n-channel Si metal-oxide-semiconductor field-effect transistor at 4.2 K. A fast (≤10 ns) response is observed only in the low carrier density (ns) regime where the dc conductance is activated. Nonlinear photo response is found for I≥10 kW/cm2 and the signal follows a simple saturation behavior. The peak illuminated effective mobility is ∼13 000 cm2/Vs (at ns∼0.7×1011 cm-2) which is more than a factor of 2 larger than the peak 4.2-K mobility of the device (at ns∼2.4×1012 cm-2). At carrier densities greater than 5×1011 cm-2 the response is bolometric with a response time ∼1 μs.


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