TITLE

Composition-selective photochemical etching of compound semiconductors

AUTHOR(S)
Ashby, C. I. H.; Biefeld, R. M.
PUB. DATE
July 1985
SOURCE
Applied Physics Letters;7/1/1985, Vol. 47 Issue 1, p62
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Compound semiconductor materials differing only in the relative amounts of constituent atoms are very difficult to etch selectively using current chemical etching techniques. We have developed a photochemical etching process that solves this problem by utilizing the difference in band gap of GaAs1-xPx materials differing slightly in composition to produce a very high degree of etching selectivity between the materials. The concepts employed in this process have general applicability to other compound semiconductor material systems.
ACCESSION #
9817742

 

Related Articles

  • Nanoscale etching and reoxidation of InAs. van Dorp, D. H.; Arnauts, S.; Cuypers, D.; Rip, J.; Holsteyns, F.; De Gendt, S. // Solid State Phenomena;2014, Vol. 219, p56 

    The article presents a study which investigates the reoxidation and etching mechanism of indium arsenide (InAs) compound semiconductor. It states that the etching experiment has been conducted in a clean room environment using polyvinylidene fluoride (PVDF) cell. It adds that the etch rates have...

  • New RIE plasma source may aid DESIRE process. K.D. // Solid State Technology;Mar95, Vol. 38 Issue 3, p26 

    Presents the results of a study evaluating an alternative plasma source that may aid the surface mount process for making semiconductors. Improvement in etch performance and residue formation; Solution to the conflict between increased lithographic resolution and reduced depth of focus;...

  • Influence of a finite energy width on the hot electron double-slit interference experiment: A... Hongo, Hiroo; Miyamoto, Yasuyuki; Gault, Michael; Furuya, Kazuhito // Journal of Applied Physics;10/15/1997, Vol. 82 Issue 8, p3846 

    Investigates the influence of electron energy width in the hot electron double-slit experiment in a semiconductor. Influence of finite energy width of the electron wave to double-slit experiment; Current-voltage characteristics of the graded emitter diode.

  • Semiconductor manufacturers look to short wavelengths. Lewotsky, Kristin // Laser Focus World;Jul97, Vol. 33 Issue 7, p82 

    Reports on the efforts of semiconductor manufacturers to bring production-level 193-nm litography online. Organization of American efforts through an industry consortium; Production of small-field steppers for photoresist development.

  • Dopant-selective etch stops in 6H and 3C SiC. Shor, J.S.; Kurtz, A.D. // Journal of Applied Physics;2/1/1997, Vol. 81 Issue 3, p1546 

    Describes a novel photoelectrochemical etching process for 6H- and 3C-SiC semiconductors. Basis for the etch-stop mechanism; Dissolution of silicon carbide.

  • Self-organized pore formation and open-loop control in semiconductor etching. Claussen, Jens Christian; Carstensen, Jürgen; Christophersen, Marc; Langa, Sergiu; Föll, Helmut // Chaos;Mar2003, Vol. 13 Issue 1, p217 

    Electrochemical etching of semiconductors, apart from many technical applications, provides an interesting experimental setup for self-organized structure formation capable, e.g., of regular, diameter-modulated, and branching pores. The underlying dynamical processes governing current transfer...

  • Directional etching of Si with perfect selectivity to SiO2 using an ultraclean electron cyclotron resonance plasma. Matsuura, Takashi; Uetake, Hiroaki; Ohmi, Tadahiro; Murota, Junichi; Fukuda, Koichi; Mikoshiba, Nobuo; Kawashima, Tadashi; Yamashita, Yoshihiro // Applied Physics Letters;4/2/1990, Vol. 56 Issue 14, p1339 

    Using a newly developed ultraclean electron cyclotron resonance plasma etcher, Si wafers masked by SiO2 were etched with a chlorine plasma at pressures of 0.6–4.0 mTorr with a microwave power of 300–700 W. Ultraclean processing under a low ion energy condition at high pressures has...

  • Etching of SiO2 in an electron cyclotron resonance argon plasma. Salimian, S.; Cooper, C. B.; Ellingboe, A. // Applied Physics Letters;4/2/1990, Vol. 56 Issue 14, p1311 

    Etching of SiO2 with low-energy Ar ions has been studied in an electron cyclotron resonance (ECR) based etching system. Ion energies were controlled by a capacitively coupled 13.56 MHz bias of the substrate. Etch rates of over 100 Ã…/min have been achieved at ion energies below 100 V. The...

  • Reactive ion etching of polycrystalline silicon using SiCl[sub 4]. Tang, Y.S.; Wilkinson, C.D.W. // Applied Physics Letters;6/24/1991, Vol. 58 Issue 25, p2898 

    Reports on reactive ion etching of polycrystalline silicon using SiCl[sub 4]. Reactive ion etching machine used in the study; Scanning electron microscopic examination of the etched samples.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics