TITLE

Composition-selective photochemical etching of compound semiconductors

AUTHOR(S)
Ashby, C. I. H.; Biefeld, R. M.
PUB. DATE
July 1985
SOURCE
Applied Physics Letters;7/1/1985, Vol. 47 Issue 1, p62
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Compound semiconductor materials differing only in the relative amounts of constituent atoms are very difficult to etch selectively using current chemical etching techniques. We have developed a photochemical etching process that solves this problem by utilizing the difference in band gap of GaAs1-xPx materials differing slightly in composition to produce a very high degree of etching selectivity between the materials. The concepts employed in this process have general applicability to other compound semiconductor material systems.
ACCESSION #
9817742

 

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