TITLE

Low-resistance nonalloyed ohmic contacts to Si-doped molecular beam epitaxial GaAs

AUTHOR(S)
Kirchner, P. D.; Jackson, T. N.; Pettit, G. D.; Woodall, J. M.
PUB. DATE
July 1985
SOURCE
Applied Physics Letters;7/1/1985, Vol. 47 Issue 1, p26
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have found evidence that the surface depletion charge density in molecular beam epitaxial n-GaAs doped heavily with Si approaches the Si concentration. In situ metallization of the as-grown surface of GaAs uniformly doped with Si at 1×1020 cm-3 yields a specific contact resistivity of 1.3 μΩ cm2, indicating a space-charge density about equal to the silicon density despite a measured bulk electron density of 4×1018 cm-3. This contact resistivity is among the lowest for nonalloyed ohmic contacts to n-GaAs. We attribute the large discrepancy between surface space-charge density and bulk electron density to the amphoteric behavior of silicon in GaAs. Surface Fermi-level pinning and arsenic stabilization create a surface depletion region where donor site selection predominates, whereas the extrinsic electron density in the bulk causes self-compensation.
ACCESSION #
9817731

 

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