TITLE

Schottky barrier diodes using thick, well-characterized boron phosphide wafers

AUTHOR(S)
Kumashiro, Y.; Okada, Y.
PUB. DATE
July 1985
SOURCE
Applied Physics Letters;7/1/1985, Vol. 47 Issue 1, p64
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Thick, single crystalline boron phosphide (BP) wafers (∼200–300 μm) grown by the chemical vapor deposition technique were characterized by the measurements of lattice constants by the Bond method and electrical properties by the Van der Pauw method. Two types of Schottky barrier diodes, i.e., n-BP-Sb and p-BP-Au, were fabricated. The n-BP-Sb diode has the highest reverse voltage of 5 V and a barrier height of 1.4 eV, while those of the p-BP-Au diode are 1 V and 1.2 eV. These results suggest that device application of BP is promising.
ACCESSION #
9817726

 

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