Schottky barrier diodes using thick, well-characterized boron phosphide wafers

Kumashiro, Y.; Okada, Y.
July 1985
Applied Physics Letters;7/1/1985, Vol. 47 Issue 1, p64
Academic Journal
Thick, single crystalline boron phosphide (BP) wafers (∼200–300 μm) grown by the chemical vapor deposition technique were characterized by the measurements of lattice constants by the Bond method and electrical properties by the Van der Pauw method. Two types of Schottky barrier diodes, i.e., n-BP-Sb and p-BP-Au, were fabricated. The n-BP-Sb diode has the highest reverse voltage of 5 V and a barrier height of 1.4 eV, while those of the p-BP-Au diode are 1 V and 1.2 eV. These results suggest that device application of BP is promising.


Related Articles

  • Selective WSi[sub 2] Schottky diodes made by rapid thermal chemical vapor deposition of WCl[sub 6]. Trincat, F.; Regolini, J.L.; Mercier, J.; Bensahel, D. // Applied Physics Letters;12/16/1991, Vol. 59 Issue 25, p3291 

    Presents the selective WSi[sub 2] Schottky diodes made by rapid thermal chemical vapor deposition of WCl[sub 6]. Fabrication of diodes on patterned and blanket wafers; Variation of resistivity with temperature deposition; Measurement on unpatterned samples where mesa diodes were fabricated.

  • Schottky diode with Ag on (112¯0) epitaxial ZnO film. Sheng, H.; Muthukumar, S.; Emanetoglu, N. W.; Lu, Y. // Applied Physics Letters;3/25/2002, Vol. 80 Issue 12, p2132 

    Silver Schottky contacts were fabricated on (11&2macr;0) n-ZnO epilayers, which were grown on R-plane sapphire substrates by metalorganic chemical-vapor deposition. The flatband barrier height was determined to be 0.89 and 0.92 eV by current-voltage and capacitance-voltage measurements,...

  • Properties of metal/diamond interfaces and effects of oxygen adsorbed onto diamond surface. Mori, Yusuke; Kawarada, Hiroshi; Hiraki, Akio // Applied Physics Letters;3/4/1991, Vol. 58 Issue 9, p940 

    Investigates the current-voltage characteristics of Schottky diodes fabricated using as-grown diamond films. Dependence of current-voltage characteristics on the electronegativities of metals; Adsorption of oxygen onto the surfaces of diamond synthesized by chemical vapor deposition; Presence...

  • High-barrier height Schottky diodes on N-InP by deposition on cooled substrates. Shi, Z.Q.; Wallace, R.L.; Anderson, W.A. // Applied Physics Letters;7/22/1991, Vol. 59 Issue 4, p446 

    Examines the formation of ultrahigh barrier height Schottky contacts to n-InP using metal deposition on a substrate at low and room temperature. Reduction in the leakage current density of diodes; Increase of the ultrahigh barrier height for LT diodes.

  • Quarter-micrometer GaAs Schottky diode with high video responsivity at 118 mum. Peatman, W.C.B.; Wood, P.A.D. // Applied Physics Letters;7/20/1992, Vol. 61 Issue 3, p294 

    Fabricates a quarter-micrometer diameter Schottky barrier mixer diode on n[sup +] gallium arsenide. Formation of anodes; Growth of layers by chemical vapor deposition; Measurement of diode zero-bias capacitance; Observation on the video responsivity of the diodes; Description of the diode...

  • Schottky barrier heights of W on Si[sub 1-x]Ge[sub x] alloys. Aubry, V.; Meyer, F. // Applied Physics Letters;11/1/1993, Vol. 63 Issue 18, p2520 

    Reports the effects of composition and thickness for a composition on the Schottky barrier height of W/P-type silicon-germanium films grown by rapid thermal chemical vapor deposition (RTCVD). Details on the barrier height rate; Growth of semiconductor layers by RTCVD; Distribution of Schottky...

  • Schottky barrier diodes on 3C-SiC. Yoshida, S.; Sasaki, K.; Sakuma, E.; Misawa, S.; Gonda, S. // Applied Physics Letters;4/15/1985, Vol. 46 Issue 8, p766 

    Schottky barrier contacts have been made on n-type 3C-SiC epitaxially grown by chemical vapor deposition, and their characteristics were studied by the capacitance and photoresponse measurements. By evaporating Au onto chemically etched surfaces of 3C-SiC, good quality Schottky barrier junctions...

  • The effect of growth temperature on the electrical properties of AlInAs/InP grown by molecular beam epitaxy and metal-organic chemical-vapor deposition. Luo, J. K.; Thomas, H.; Clark, S. A.; Williams, R. H. // Journal of Applied Physics;12/1/1993, Vol. 74 Issue 11, p6726 

    Discusses a study which investigated the effect of growth temperature on the electrical properties of AlInAs/InP grown by molecular beam epitaxy and metal-organic chemical vapor deposition. Techniques used for the growth of the layers on n[sup+]-InP substrates; Characteristics of the layers;...

  • Laser-chemical vapor deposition of W Schottky contacts on GaAs using WF[sub 6] and SiH[sub 4]. Tabbal, Malek; Meunier, Michel; Izquierdo, Ricardo; Beau, Be´ne´dicte; Yelon, Arthur // Journal of Applied Physics;5/15/1997, Vol. 81 Issue 10, p6607 

    Reports on the deposition of tungsten on gallium arsenide (GaAs) using a low-temperature laser-chemical vapor deposition process. Induction of metallic W formation from a gas mixture; Columnar structure shown by scanning electron microscopy of the W films; Schottky diodes obtained during a...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics