X-ray double crystal diffraction study of porous silicon

Young, I. M.; Beale, M. I. J.; Benjamin, J. D.
June 1985
Applied Physics Letters;6/15/1985, Vol. 46 Issue 12, p1133
Academic Journal
Depending on the dopant concentration, two distinct types of porous silicon can be formed during the anodization of silicon in hydrofluoric acid. A range of samples of both types of porous silicon has been investigated using x-ray double crystal diffraction techniques. The crystal lattice of porous silicon is found to be tetragonally distorted. In the plane of the substrate, the interplanar spacing of the porous film is identical to that of the substrate but is increased in the direction normal to it. The increase is typically 700 ppm in the type of film formed on heavily doped silicon and 6000 ppm in that on lightly doped silicon. We propose that stresses, generated by the growth of a native oxide on the surface of the pores, are responsible for the observed increase in lattice parameter. The different interplanar spacings of the two types of film are related to the observed differences in their oxygen contents which are a consequence of their different surface area to volume ratios.


Related Articles

  • Characterization of porous InP(001) layers by triple-crystal X-ray diffractometry. Lomov, A. A.; Prokhorov, D. Yu.; Imamov, R. M.; Nohavica, D.; Gladkov, P. // Crystallography Reports;Sep2006, Vol. 51 Issue 5, p754 

    The structure of porous layers fabricated on the surface of an InP(001) semiconductor wafer by electrochemical oxidation has been studied by triple-crystal X-ray diffractometry. It is shown that, depending on the probe potential (current density), column-shaped pores of two types with different...

  • X-ray Diffraction II: Using Single-Crystal X-ray Diffraction to Study Polymorphism and Solvatomorphism. Brittain, Harry G. // Spectroscopy;Jul2000, Vol. 15 Issue 7, p34 

    Examines the use of single-crystal x-ray diffraction to study the types of molecular structures that can exist for polymorphic and solvatomorphic solids. Evaluation of crystallographic studies of polymorphic systems; Analysis of packing polymorphisms and conformational polymorphisms;...

  • DIGITAL DIFFRACTION. Hayes, Brian // American Scientist;May/Jun96, Vol. 84 Issue 3, p210 

    Analyzes an x-ray diffraction pattern with a computer. Uses of the Fraunhofer approximation in x-ray diffraction; Importance of Huygen's principle in understanding diffraction; Problems in examining diffraction through x-ray crystallography.

  • Diophantine Laws for Nets of the Highest Symmetries. Sheremet’ev, I. A. // Crystallography Reports;Mar2001, Vol. 46 Issue 2, p161 

    The theoretical-numerical properties of the square and the hexagonal nets are presented as well as their characteristic triads of integers—the Denis numbers—applicable to the practical X-ray diffraction analysis of single crystals.

  • Science smiles. Guha, Ayan // Resonance: Journal of Science Education;Dec2014, Vol. 19 Issue 12, p1076 

    The comic strip "Two milestones in X-ray crystallography" depicting experiment of scientists on X-rays undergoing diffraction by crystals and diffraction image of deoxyribonucleic acid (DNA).

  • X-ray Diffraction I: On the Diffraction of X-rays by Crystalline Solids. Britain, Harry G.; Brittain, Harry G. // Spectroscopy;Jun2000, Vol. 15 Issue 6, p44 

    Establishes a foundation of the basic principles regarding the nature of the crystalline state in pharmaceutics and the diffraction of X-rays by such materials. Background on X-ray crystallography; Nature of crystalline solids; Diffraction of electromagnetic radiation by crystalline solids.

  • Determination of residual stress in Cr-implanted Al[sub 2]O[sub 3] by glancing angle x-ray.... Specht, E.D.; Sparks, C.J. // Applied Physics Letters;5/4/1992, Vol. 60 Issue 18, p2216 

    Identifies the x-ray diffraction of residual stress in sapphire crystals implanted with Cr[sup +] ions. Measurement of both in-plane and out-of-plane lattice constants; Determination of the Bragg peak positions to identify average stress; Consistency of the x-ray residual stress measurements...

  • Evolution of nanocrystal size distribution in porous silicon nanoparticles during storage in aqueous media: X-ray diffraction analysis. Kharin, Alexander Yu; Kargina, Yulia V.; Timoshenko, Victor Yu // Journal of Nanoparticle Research;Feb2019, Vol. 21 Issue 2, p1 

    X-ray diffraction studies of electrochemically prepared mesoporous and microporous silicon particles were carried out to monitor their dissolution in aqueous media. The dissolution process was found to result in either decreasing or an increasing of the mean size of silicon nanocrystallites in...

  • Stress in oxidized porous silicon layers. Barla, K.; Herino, R.; Bomchil, G. // Journal of Applied Physics;1/15/1986, Vol. 59 Issue 2, p439 

    Determines stress in oxidized porous silicon layers using X-ray diffraction to measure substrate curvature. Method used in determining oxide volume expansion; Factor attributed to the stress in an oxide layer formed from porous silicon; Drawback of the method.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics