TITLE

Uniform and thermally stable AuGeNi ohmic contacts to GaAs

AUTHOR(S)
Callegari, A.; Pan, E.T-S.; Murakami, M.
PUB. DATE
June 1985
SOURCE
Applied Physics Letters;6/15/1985, Vol. 46 Issue 12, p1141
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
An in situ rf sputter precleaning of the GaAs substrate before AuGeNi ohmic metal deposition yields contact resistance Rc=0.11 Ω mm at a peak doping of ∼1018/cm3. Excellent uniformity and thermal stability are achieved across the wafer. The contacts do not deteriorate appreciably after themal treatment at 410 °C for 57 h.
ACCESSION #
9817711

 

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