Role of surface kinetics and interrupted growth during molecular beam epitaxial growth of normal and inverted GaAs/AlGaAs(100) interfaces: A reflection high-energy electron diffraction intensity dynamics study

Madhukar, A.; Lee, T. C.; Yen, M. Y.; Chen, P.; Kim, J. Y.; Ghaisas, S. V.; Newman, P. G.
June 1985
Applied Physics Letters;6/15/1985, Vol. 46 Issue 12, p1148
Academic Journal
Measurements of the time-dependent intensity in reflection high-energy electron diffraction during [100] growth of AlxGa1-x As on GaAs (normal interface) and of GaAs on AlxGa1-x As (inverted interface) are reported for such growth on static, dynamic, and relaxing surfaces. It is shown that the growth kinetics imply that interruption of growth for an optimized duration after deposition of each alternating layer can result in structurally and chemically improved interfaces, including the possibility of comparably good normal and inverted interfaces, in heterojunctions, multiple quantum wells, and superlattices.


Related Articles

  • As2S3/GaAs, a new amorphous/crystalline heterojunction for the III-V semiconductors. Yablonovitch, E.; Gmitter, T. J.; Bagley, B. G. // Applied Physics Letters;11/19/1990, Vol. 57 Issue 21, p2241 

    Much of the technology of our era is based on the SiO2/Si amorphous/crystalline heterojunction interface. Now it appears that As2S3/GaAs amorphous/crystalline heterojunctions show some technological promise. We have found that properly prepared As2S3/GaAs interfaces can have reasonably good...

  • Experimental measurement of bulk and edge generation in Al[sub 0.4]Ga[sub 0.6]As PiN structures. Neudeck, P.G.; Cooper Jr., J.A.; Melloch, M.R. // Applied Physics Letters;3/18/1991, Vol. 58 Issue 11, p1175 

    Investigates experimentally the behavior of reverse-biased PiN junction leakage at low voltages in Al[sub 0.4] Ga[sub 0.6] As semiconductors. Importance of bulk generation at the etched device periphery; Temperature dependence of both leakage mechanisms; Occurrence of majority of bulk...

  • Optical activity of Yb in GaAs and low-dimensional GaAs/GaAlAs structures. Gippius, A. A.; Konnov, V. M.; Dravin, V. A.; Loiko, N. N.; Kazakov, I. P.; Ushakov, V. V. // Semiconductors;Jun99, Vol. 33 Issue 6, p627 

    It is shown that the optical activation of Yb in GaAs and low-dimensional GaAs/GaAlAs structures can be achieved by forming three-component (Yb+S/Se/Te+O) luminescence centers based on the Yb[sup 3+] ion. A correlation between the characteristics of these centers and the parameters of the...

  • Evidence for band-gap narrowing effects in Be-doped, p-p+ GaAs homojunction barriers. Chuang, H. L.; DeMoulin, P. D.; Klausmeier-Brown, M. E.; Melloch, M. R.; Lundstrom, M. S. // Journal of Applied Physics;12/1/1988, Vol. 64 Issue 11, p6361 

    Presents a study that examined the electrical performance of beryllium-doped gallium arsenide semiconductor homojunction barriers. Methodology; Analysis of the current-voltage characteristics of the sample; Correlation between surface recombination velocity and etch depth.

  • Measuring the energetic distribution of ballistic electrons after their refraction at an Au–GaAs interface. Rakoczy, D.; Strasser, G.; Smoliner, J. // Applied Physics Letters;12/23/2002, Vol. 81 Issue 26, p4964 

    In this work, ballistic electron emission microscopy/spectroscopy on biased GaAs-A1As double-barrier resonant tunneling structures is used to study the energetic distribution of ballistic electrons transmitted through an Au-GaAs interface. Measuring the ballistic current as a function of...

  • Fabrication of GaAs tunnel junctions by a rapid thermal diffusion process. Ghandhi, S. K.; Huang, R. T.; Borrego, J. M. // Applied Physics Letters;2/10/1986, Vol. 48 Issue 6, p415 

    A rapid thermal diffusion process for the fabrication of GaAs tunnel junctions, utilizing a doped oxide zinc source and a protective cap layer of phosphosilicate glass, is described in this letter. It is shown that tunnel junctions fabricated by this open tube process are suited for low...

  • MOCVD-GROWN InGaP/GaAs EMITTER DELTA DOPING HETEROJUNCTION BIPOLAR TRANSISTORS. Yarn, K.F. // Active & Passive Electronic Components;Sep2002, Vol. 25 Issue 3, p239 

    The influence of delta doping sheet at base-emitter (BE) junction for an InGaP/GaAs heterojunction bipolar transistor (HBT) with a 75?� undoped spacer layer is investigated. A common emitter current gain of 235, an offset voltage as small as 50?mV and an Ic ideal factor of 1.01 are...

  • High-resolution electron microscopy of the GaAs/AlGaAs heterointerface with (200) and transmitted beams. Ikarashi, Nobuyuki; Sakai, Akira; Baba, Toshio; Ishida, Koichi // Applied Physics Letters;12/11/1989, Vol. 55 Issue 24, p2509 

    In <100> cross-sectional high-resolution electron microscopy of the GaAs/AlAs heterointerface, images were formed only with chemically sensitive (200) and transmitted beams. The atomic configuration of the GaAs/AlAs interface can be characterized by the variation of (200) fringes at atomic...

  • Study of the interface of undoped and p-doped ZnSe with GaAs and AlAs. Kassel, L.; Abad, H.; Garland, J. W.; Raccah, P. M.; Potts, J. E.; Haase, M. A.; Cheng, H. // Applied Physics Letters;1/1/1990, Vol. 56 Issue 1, p42 

    We have used electrolyte electroreflectance (EER) to characterize ZnSe/GaAs and ZnSe/AlAs interfaces. The great sensitivity of EER to interface space-charge regions enabled us to detect both interface crossover transitions and transitions to triangular-well interface states. The observation of...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics