Thermal profiles during recrystallization of silicon on insulator with scanning incoherent light line sources

Kubota, Katsuhiko; Hunt, Charles E.; Frey, Jeffrey
June 1985
Applied Physics Letters;6/15/1985, Vol. 46 Issue 12, p1153
Academic Journal
The classical heat equation is solved in one and two dimensions to obtain temperature profiles during recrystallization of silicon thin films on insulators with scanning incoherent light sources. The extent of the Si molten region in multilayered structures is predicted using a macroscopic approach. The enthalpy method incorporates the latent heat of fusion into the temperature-enthalpy relation for Si; the Kirchhoff transformation takes the temperature dependence of the thermal conductivities for the materials into account. The calculations yield the Si melt depths and temperatures and are intended to establish proper experimental conditions.


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