Temperature dependence of hole mobility in GaAs-Ga1-xAlxAs heterojunctions

Mendez, E. E.; Wang, W. I.
June 1985
Applied Physics Letters;6/15/1985, Vol. 46 Issue 12, p1159
Academic Journal
The mobility and carrier density of two-dimensional hole systems formed at the interface of GaAs-Ga1-xAlxAs heterojunctions have been measured in the temperature range 1.9–100 K. The mobility increased monotonically with decreasing temperature, and in one sample reached 2.35×105 cm2 V-1 s-1, the highest value reported for holes. Optical phonon scattering (for T>40 K) and acoustic phonon scattering (for 15 K≤T≤40 K) are the mechanisms limiting the mobility down to low temperature, where Coulomb scattering dominates (for T<15 K). An observed linear increase of the inverse mobility with temperature cannot be explained quantitatively with a theory that was able to account for a similar behavior found in two-dimensional electrons.


Related Articles

  • Room-temperature cw operation of InGaPAs/GaAlAs visible light double heterojunction lasers. Kaneiwa, Shinji; Takiguchi, Haruhisa; Hayakawa, Toshiro; Yamamoto, Saburo; Hayashi, Hiroshi; Yano, Seiki; Hijikata, Toshiki // Applied Physics Letters;3/1/1985, Vol. 46 Issue 5, p455 

    InGaPAs/GaAlAs double heterojunction (DH) lasers operated continuously at room temperature in the spectral range of 720–730 nm. The DH structure was grown on a GaAs substrate by liquid phase epitaxy, and the laser diode fabrication was the same as V-channeled substrate inner stripe...

  • Theoretical and experimental capacitance-voltage behavior of Al0.3Ga0.7As/GaAs modulation-doped heterojunctions: Relation of conduction-band discontinuity to donor energy. Norris, George B.; Look, D. C.; Kopp, W.; Klem, J.; Morkoç, H. // Applied Physics Letters;8/15/1985, Vol. 47 Issue 4, p423 

    For the first time, we show that the capacitance-voltage behavior of modulation-doped heterojunctions may be accurately described by a first-principles theory that includes selfconsistent quantum two-dimensional (2-D) electron subbands in the GaAs, numerical solution of Poisson's equation for...

  • Effect of a buried superlattice on the dynamic storage of electrons at the AlGaAs/GaAs heterojunction. Melloch, M. R.; Qian, Q-D.; Cooper, J. A. // Applied Physics Letters;6/8/1987, Vol. 50 Issue 23, p1657 

    A buried five-period 94 Ã… Al0.3Ga0.7As/ 56 Ã… GaAs superlattice is employed to improve the dynamic retention of electrons at an AlGaAs/GaAs heterojunction. The improvement is attributed to the impurity trapping and gettering properties of this superlattice and the amount of time our...

  • X-ray photoemission core level determination of the GaSb/AlSb heterojunction valence-band discontinuity. Gualtieri, G. J.; Schwartz, G. P.; Nuzzo, R. G.; Sunder, W. A. // Applied Physics Letters;10/20/1986, Vol. 49 Issue 16, p1037 

    The valence-band discontinuity ΔEv has been determined for the (100) GaSb/AlSb strained-layer heterojunction with a room-temperature lattice mismatch of 0.65%, using x-ray photoemission core level spectroscopy. For 30 Å epitaxial layers of AlSb grown on GaSb, the measured valence-band...

  • Effect of the buffer layer of GaSe intrinsic oxide with nanometer thickness on electrical, photoelectric, and emissive properties of ITO-GaSe heterostructures. Drapak, S. I.; Kovalyuk, Z. D. // Semiconductors;Mar2007, Vol. 41 Issue 3, p301 

    The effect of the thickness of a buffer layer of intrinsic GaSe oxide on the electrical, photoelectric, and emissive properties of ITO-GaSe heterojunctions is studied. It is established that the introduction of a Ga2O3 layer with thickness as large as 5–6 nm into the ITO-GaSe...

  • Band alignments at Ga2O3 heterojunction interfaces with Si and Ge. Gibbon, J. T.; Jones, L.; Roberts, J. W.; Althobaiti, M.; Chalker, P. R.; Mitrovic, Ivona Z.; Dhanak, V. R. // AIP Advances;Jun2018, Vol. 8 Issue 6, pN.PAG 

    Amorphous Ga2O3 thin films were deposited on p-type (111) and (100) surfaces of silicon and (100) germanium by atomic layer deposition (ALD). X-ray photoelectron spectroscopy (XPS) was used to investigate the band alignments at the interfaces using the Kraut Method. The valence band offsets were...

  • 11.8 GHz GAINP/GAAS HBT dynamic frequency divider using HLO-FF technique. Hung-Ju Wei; Chinchun Meng; YuWen Chang; Guo-Wei Huang // Microwave & Optical Technology Letters;Oct2008, Vol. 50 Issue 10, p2642 

    An integrated GaInP/GaAs heterojunction bipolar transistor (HBT) dynamic frequency divider based on HLO-FF (high-speed latching operating flip-flop) structure is demonstrated at 4.1–11.8 GHz. In this experiment, a conventional static frequency divider using the same cut-off-frequency...

  • A study on the spectral response of back-illuminated p-i-n AlGaN heterojunction ultraviolet photodetector. Zhao, D. G.; Zhang, S.; Jiang, D. S.; Zhu, J. J.; Liu, Z. S.; Wang, H.; Zhang, S. M.; Zhang, B. S.; Yang, H. // Journal of Applied Physics;Sep2011, Vol. 110 Issue 5, p053701 

    The spectral responses of back-illuminated p-i-n AlGaN ultraviolet photodetector under different bias voltage are investigated. The device structure is composed of p-GaN/p-Al0.3Ga0.7N/i-Al0.3Ga0.7N/n-Al0.6Ga0.4N and Ohmic contacts, where the p-GaN layer is very thin. There are two peaks in the...

  • Minority carrier transport properties of GaInNAs heterojunction bipolar transistors with 2% nitrogen. Welty, Rebecca J.; Huoping Xin, Rebecca J.; Tu, Charles W.; Asbeck, Peter M. // Journal of Applied Physics;1/1/2004, Vol. 95 Issue 1, p327 

    GaAs-based heterojunction bipolar transistors (HBTs) have a relatively large turn-on voltage of approximately 1.4 V that can only be decreased by reducing the band-gap energy of the base material. For a variety of applications, particularly operation with low power supply voltage and reduced...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics