Ion-assisted etching of silicon by SF6

Oostra, D. J.; Haring, A.; de Vries, A. E.; Sanders, F. H. M.; Miyake, K.
June 1985
Applied Physics Letters;6/15/1985, Vol. 46 Issue 12, p1166
Academic Journal
Sputtering of silicon by 3-keV Ar+ ions in the presence of a molecular SF6 beam has been investigated by mass spectrometry and time-of-flight measurements. At temperatures below 100 K chemical reactions are induced between the silicon and an adsorbed layer of SF6 under ion bombardment leading to newly formed molecular products. The main products formed are SiFx’ (x=0–4) and a small amount of SiSFy compounds (y=0–2). The kinetic energies of these molecular species are for the major part in the 0.1-eV region which excludes evaporation at substrate temperature to be a dominant mechanism for erosion. An effective sputtering yield for silicon of approximately 15 is obtained.


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