Measurement and reduction of interface states at the recrystallized silicon-underlying insulator interface

Sturm, James C.; Plummer, James D.; Gibbons, James F.
June 1985
Applied Physics Letters;6/15/1985, Vol. 46 Issue 12, p1171
Academic Journal
Deep level transient spectroscopy and capacitance-voltage measurements have been performed on an inverted metal-oxide-semiconductor (MOS) capacitor structure to measure the interface state density at the recrystallized silicon-underlying insulator interface. The effects of different recrystallization caps, annealing steps, and different underlying oxides have been investigated. An interface state density in the mid 1010 cm-2 eV-1 range can be consistently obtained, enabling well-behaved MOS transistor channels on the bottom of the recrystallized films.


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