Dilute magnetic semiconductor (Cd1-xMnxTe) quantum well laser

Bicknell, R. N.; Giles-Taylor, N. C.; Blanks, D. K.; Schetzina, J. F.; Anderson, N. G.; Laidig, W. D.
June 1985
Applied Physics Letters;6/15/1985, Vol. 46 Issue 12, p1122
Academic Journal
In this letter we report the first observation of stimulated emission from an optically pumped multilayer structure in which Cd1-xMnxTe, a dilute magnetic semiconductor (DMS), serves as the active quantum well material. The DMS laser structure was grown by molecular beam epitaxy with an active region consisting of 25 Cd0.81Mn0.19Te quantum wells of thickness LZ=125 Å alternating with 24 Cd0.64Mn0.36Te barrier layers of thickness LB=40 Å. The DMS lasers operate in the visible (red) spectral region at 665–670 nm when pumped at T=15 K with a pulsed argon ion laser. The threshold for laser action occurs at a peak pump power density of about 2.0×104 W/cm2.


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