TITLE

X-ray photoelectron spectroscopy study of the effects of ultrapure water on GaAs

AUTHOR(S)
Massies, J.; Contour, J. P.
PUB. DATE
June 1985
SOURCE
Applied Physics Letters;6/15/1985, Vol. 46 Issue 12, p1150
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
X-ray photoelectron spectroscopy has been used to investigate the effects of de-ionized water on chemical etched GaAs surfaces. When the treatment with water is performed in static conditions (stagnant water) a Ga-rich oxide layer is formed on GaAs at the rate of 10–20 Å h-1. In contrast, when the GaAs surface is treated in dynamic conditions (running water), no oxide buildup is observed. Moreover, running water can remove the oxide film formed in static conditions, as well as oxidized layers due to air exposure. These results are discussed in the framework of cleaning prior to molecular beam epitaxy.
ACCESSION #
9817675

 

Related Articles

  • Ultrathin epitaxial Fe films on vicinal GaAs(001): A study by spin-resolved photoelectron spectroscopy. Zhang, T.; Spangenberg, M.; Greig, D.; Takahashi, N.; Shen, T.-H.; Matthew, J. A. D.; Cornelius, S.; Rendall, M.; Seddon, E. A. // Applied Physics Letters;2/12/2001, Vol. 78 Issue 7, p961 

    Thin epitaxial Fe films have been grown on vicinal GaAs(001) substrates and their remanent magnetic properties and the degree of substrate atom diffusion investigated using synchrotron-based photoelectron spectroscopy. The vicinal Fe films, though exhibiting greater As diffusion than their...

  • Photon-assisted oxidation of the GaAs(100) surface using water at 90 K. Ettedgui, E.; Park, Ken T.; Cao, Jianming; Gao, Y.; Ruckman, M. W. // Journal of Applied Physics;5/15/1995, Vol. 77 Issue 10, p5411 

    Presents a study that examined the interaction of water with gallium arsenide (100) semiconductor using photoelectron spectroscopy. Methodology; Analysis of the energy distribution curves of the interaction; Assessment of the condensation of water in the semiconductor.

  • COMPOSITION AND OPTICAL CHARACTERISTICS OF ELECTROCHEMICALLY-SYNTHESIZED GaAs NANOCRYSTALS. Nayak, J.; Varma, S.; Paramanik, D.; Sahu, S. N. // International Journal of Nanoscience;Jun2004, Vol. 3 Issue 3, p281 

    The synthesis of the GaAs nanoparticles, having sizes 7 nm to 15 nm, by a low cost electrochemical technique has been reported. The absence of any foreign impurity has been confirmed by the Proton-Induced X-rays Emission analysis. Rutherford Backscattering measurement has been performed in order...

  • Energy-band parameters of atomic-layer-deposition Al2O3/InGaAs heterostructure. Huang, M. L.; Chang, Y. C.; Chang, C. H.; Lin, T. D.; Kwo, J.; Wu, T. B.; Hong, M. // Applied Physics Letters;7/3/2006, Vol. 89 Issue 1, p012903 

    The valence-band offset has been determined to be 3.83±0.05 eV at the atomic-layer-deposition Al2O3/InGaAs interface by x-ray photoelectron spectroscopy. The Au–Al2O3/InGaAs metal-oxide-semiconductor diode exhibits current-voltage characteristics dominated by Fowler-Nordheim tunneling....

  • Shifted x-ray photoelectron peak in molecular beam epitaxial GaAs grown at 200 degrees C. Look, D.C.; Grant, J.T. // Applied Physics Letters;9/14/1992, Vol. 61 Issue 11, p1329 

    Examines the molecular beam epitaxy of gallium arsenide grown at 200 degrees Celsius using shifted x-ray photoelectron spectroscopy. Reduction of effective surface potential energy; Use of Hall effect parameters and absorption measurements in the Poisson analysis; Discussion of the...

  • Impact of surface chemical treatment on capacitance-voltage characteristics of GaAs metal-oxide-semiconductor capacitors with Al2O3 gate dielectric. Shahrjerdi, Davood; Tutuc, Emanuel; Banerjee, Sanjay K. // Applied Physics Letters;8/6/2007, Vol. 91 Issue 6, p063501 

    The authors examine the impact of two different chemical surface treatment methods on capacitance-voltage characteristics of GaAs metal-oxide-semiconductor (MOS) capacitors using NH4OH and (NH4)2S prior to atomic layer deposition (ALD) of Al2O3. In both cases, x-ray photoelectron spectroscopy...

  • GaAs metal-oxide-semiconductor capacitors using atomic layer deposition of HfO2 gate dielectric: Fabrication and characterization. Shahrjerdi, D.; Garcia-Gutierrez, D. I.; Akyol, T.; Bank, S. R.; Tutuc, E.; Lee, J. C.; Banerjee, S. K. // Applied Physics Letters;11/5/2007, Vol. 91 Issue 19, p193503 

    In this letter, we have investigated the physical and electrical characteristics of atomic layer deposition of HfO2 on GaAs substrates. X-ray photoelectron spectroscopy (XPS) analysis revealed no significant reduction of arsenic oxides upon deposition of HfO2 on GaAs using...

  • Properties of GaAs(001) surfaces thermally annealed in vacuum. Morota, Hiroaki; Adachi, Sadao // Journal of Applied Physics;Feb2009, Vol. 105 Issue 4, pN.PAG 

    Thermal degradation of GaAs(001) surfaces has been studied using spectroscopic ellipsometry (SE), optical microscopy, ex situ atomic force microscopy (AFM), x-ray photoelectron spectroscopy (XPS), and photoluminescence (PL) techniques. The SE data suggest that thermal annealing causes no or...

  • Effect of hydrogen on the chemical bonding and band structure at the Al2O3/In0.53Ga0.47As interface. Shekhter, Pini; Kornblum, Lior; Liu, Zuoguang; Cui, Sharon; Ma, T. P.; Eizenberg, Moshe // Applied Physics Letters;12/5/2011, Vol. 99 Issue 23, p232103 

    Surface passivation of high mobility semiconductors such as InGaAs is a crucial bottleneck towards their integration in metal-oxide-semiconductor devices. The chemical structure and band offsets of InGaAs-Al2O3 with different passivations were investigated by x-ray photoelectron spectroscopy....

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics