X-ray photoelectron spectroscopy study of the effects of ultrapure water on GaAs

Massies, J.; Contour, J. P.
June 1985
Applied Physics Letters;6/15/1985, Vol. 46 Issue 12, p1150
Academic Journal
X-ray photoelectron spectroscopy has been used to investigate the effects of de-ionized water on chemical etched GaAs surfaces. When the treatment with water is performed in static conditions (stagnant water) a Ga-rich oxide layer is formed on GaAs at the rate of 10–20 Å h-1. In contrast, when the GaAs surface is treated in dynamic conditions (running water), no oxide buildup is observed. Moreover, running water can remove the oxide film formed in static conditions, as well as oxidized layers due to air exposure. These results are discussed in the framework of cleaning prior to molecular beam epitaxy.


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