High-speed junction-depleted Ga0.47In0.53As photoconductive detectors

Chen, C. Y.; Dentai, A. G.; Kasper, B. L.; Garbinski, P. A.
June 1985
Applied Physics Letters;6/15/1985, Vol. 46 Issue 12, p1164
Academic Journal
A high-speed junction-depleted Ga0.47In0.53As photoconductive detector without making use of radiation damage to the sample is reported. The detector has a light absorbing region in the n-layer of an unbiased p-n junction. As a result of the built-in field associated with the p-n junction, the carriers generated far from the surface were removed, leading to a picosecond response time. When tested by 100-ps, 1.55-μm light pulses, the detector showed a fall time of 90 ps with an external gain >1.3 (no antireflection coating). Receiver sensitivity at 1 Gb/s was -25.3 dBm at 1.55 μm and an error rate of 10-9.


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