TITLE

AlGaAs/GaAs melt-etched inner stripe laser diode with self-aligned structure

AUTHOR(S)
Watanabe, A.; Yamada, T.; Imanaka, K.; Horikawa, H.; Kawai, Y.; Sakuta, M.
PUB. DATE
June 1985
SOURCE
Applied Physics Letters;6/1/1985, Vol. 46 Issue 11, p1023
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A novel liquid phase epitaxy (LPE) used to fabricate a channeled stripe AlGaAs/GaAs laser diode emitting at 780 nm with a self-aligned structure is reported. In the present method, only two-step LPE and a conventional wet chemical etching are required. The inner stripe, 4 μm wide, is grooved by a newly developed preferential melt-etching technique during crystal growth without exposure of the wafer to air. A maximum cw power output of 28 mW per facet without facet coatings and a threshold current of 50 mA are accomplished. Fundamental transverse mode operation up to 10 mW and single longitudinal mode above 2.5 mW are demonstrated.
ACCESSION #
9817667

 

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