Etch rate enhancement of silicon in CF4-O2 plasmas

White, L. K.; Maa, Jer-Shen
June 1985
Applied Physics Letters;6/1/1985, Vol. 46 Issue 11, p1050
Academic Journal
An etch rate enhancement of silicon in CF4-O2 gas mixtures in the presence of alkali metal ion hydroxide contaminants is examined. Sodium ion implanted samples show that the alkali metal ion is responsible for this effect. Other solution contamination experiments show that this effect was absent for hydroxide and chloride contaminants without an alkali metal, chlorine containing etchant gas mixtures, phosphorus-doped silicon, Si3N4, and TaSi2 substrates.


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