TITLE

Etch rate enhancement of silicon in CF4-O2 plasmas

AUTHOR(S)
White, L. K.; Maa, Jer-Shen
PUB. DATE
June 1985
SOURCE
Applied Physics Letters;6/1/1985, Vol. 46 Issue 11, p1050
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
An etch rate enhancement of silicon in CF4-O2 gas mixtures in the presence of alkali metal ion hydroxide contaminants is examined. Sodium ion implanted samples show that the alkali metal ion is responsible for this effect. Other solution contamination experiments show that this effect was absent for hydroxide and chloride contaminants without an alkali metal, chlorine containing etchant gas mixtures, phosphorus-doped silicon, Si3N4, and TaSi2 substrates.
ACCESSION #
9817650

 

Related Articles

  • Electrical conductivity for nonideal partially ionized alkali plasmas. Starzynski, J.; Redmer, R.; Schlanges, M. // Physics of Plasmas;May96, Vol. 3 Issue 5, p1591 

    Calculates the electrical conductivity for partially ionized alkali-atom plasmas starting from quantum kinetic equations which account for collision terms of free and bound particles including many body effects. Scattering cross sections entering the conductivity in T matrix approximations;...

  • An accelerator for alkali metal plasmas. Chakraborty, A. K.; Kumar, Ajai; Mattoo, S. K. // Review of Scientific Instruments;May94, Vol. 65 Issue 5, p1594 

    A washer plasma gun for alkali-metal plasma is developed. This gun is suitable as a source for experiments on alkali-metal plasmas, plasma diagnostics, and in various applications such as ion-beam sputter deposition. The gun uses an injector of alkali-metal vapor based on the principles of laser...

  • A study on the oxidation kinetics of silicon in inductively coupled oxygen plasma. Choi, Yong Woo; Ahn, Byung Tae // Journal of Applied Physics;10/1/1999, Vol. 86 Issue 7, p4004 

    Presents information on a study which studied the oxidation kinetics of silicon in inductively coupled oxygen plasma at temperatures ranging from 350 to 450 degrees centigrade. Experimental procedures; Results and discussion; Conclusions.

  • Electrical and optical properties of defect states induced by air plasma process in n/n+ epitaxial silicon. Wang, F. P.; Xu, J. G.; Sun, H. H. // Journal of Applied Physics;8/15/1990, Vol. 68 Issue 4, p1520 

    Presents a study that investigated the electrical and optical properties of radio frequency air plasma process-induced defect states in epitaxial silicon. Background on plasma-based dry etching processes; Application of junction capacitance techniques in the study; Results and implications.

  • Photoinduced stress in hydrogenated amorphous silicon films. Stratakis, E.; Spanakis, E.; Tzanetakis, P.; Fritzsche, H.; Guha, S.; Yang, J. // Applied Physics Letters;3/11/2002, Vol. 80 Issue 10, p1734 

    Photo-induced compressive stress ΔS in hydrogenated amorphous silicon (a-Si:H) has been studied using films deposited by plasma-enhanced or hot-wire chemical vapor deposition on crystalline silicon microcantilevers. The kinetics of ΔS(t) first rises with exposure time as t[sup 0.5] and...

  • Numerical modeling of capacitively coupled hydrogen plasmas: Effects of frequency and pressure. Novikova, T.; Kalache, B.; Bulkin, P.; Hassouni, K.; Morscheidt, W.; Roca i Cabarrocas, P. // Journal of Applied Physics;3/15/2003, Vol. 93 Issue 6, p3198 

    In the field of plasma deposition of amorphous and microcrystalline silicon, the increase of the excitation frequency has often been considered as a way to enhance the deposition rate. Moreover, the increase of pressure has also been shown to enhance the deposition rate and improve the film...

  • Hydrogen poor cationic silicon clusters in an expanding argon–hydrogen–silane plasma. Kessels, W. M. M.; van de Sanden, M. C. M.; Schram, D. C. // Applied Physics Letters;5/11/1998, Vol. 72 Issue 19 

    Cationic silicon clusters Si[sub n]H[sub m][sup +] with up to ten silicon atoms have been detected mass spectrometrically in an expanding argon–hydrogen–silane plasma used for fast deposition of amorphous hydrogenated silicon. A reaction pathway is proposed in which initial silane...

  • Detection and comparison of localized states produced in poly-Si/ultra-thin oxide/silicon, structures by plasma exposure or plasma charging during reactive ion etching. Fonash, Stephen J.; Ozaita, Milagros; Awadelkarim, Osama O.; Preuninger, Fred; Chan, Y. D. // Journal of Applied Physics;2/15/1996, Vol. 79 Issue 4, p2091 

    Presents a study which detected and compared localized states produced in poly-silicon/ultra-thin oxide/silicon, structures by plasma exposure or plasma charging during reactive ion etching. Experimental procedure; Results of the study; Conclusions.

  • Thin gate oxide behavior during plasma patterning of silicon gates. Vallier, L.; Desvoivres, L.; Bonvalot, M.; Joubert, O. // Applied Physics Letters;8/23/1999, Vol. 75 Issue 8, p1069 

    Studies an unexpected behavior of thin gate oxide layers exposed to plasma processes developed for the patterning of silicon gates. Growth of the gate oxide layer; Oxidation of the bulk underlying silicon during the low-energy step of the process.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics