TITLE

Boron delta doping in Si and Si0.8Ge0.2 layers

AUTHOR(S)
Jorke, H.; Kibbel, H.
PUB. DATE
October 1990
SOURCE
Applied Physics Letters;10/22/1990, Vol. 57 Issue 17, p1763
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
By using an elemental boron effusion cell, B delta doping structures (5×1013 B atoms/cm2) were grown on Si (100) by molecular beam epitaxy at different substrate temperatures and cap layer compositions (Si and Si0.8Ge0.2). Close to the delta interface the B profiles are characterized by an exponential decay in growth direction. For the Si cap the results suggest the existence of a transition from equilibrium segregation (exponential decay length [bar_over_tilde:_approx._equal_to]20 nm) to kinetically limited segregation (transition temperature [bar_over_tilde:_approx._equal_to]600 °C at 0.1 nm/s). The doping profiles also give evidence of a temporal change of the segregation coefficient which is probably caused by clustering of segregating B atoms.
ACCESSION #
9817646

 

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