TITLE

Localized epitaxial growth of hexagonal and tetragonal MoSi2 on (111) Si

AUTHOR(S)
Lin, W. T.; Chen, L. J.
PUB. DATE
June 1985
SOURCE
Applied Physics Letters;6/1/1985, Vol. 46 Issue 11, p1061
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Both hexagonal and tetragonal forms of MoSi2 (h-MoSi2 and t-MoSi2) were grown epitaxially on (111)Si for the first time. The best epitaxy was obtained in samples annealed at 1050 °C for 1 h. The orientation relationships between epitaxial h-MoSi2 and Si were determined to be [0001]MoSi2//[111]Si and (2020)MoSi2//(202)Si whereas those between epitaxial t-MoSi2 and Si were analyzed to be [110]MoSi2//[111]Si and (004)MoSi2//(202)Si. Regular interfacial dislocations, 100 Å in spacing, were identified to be of edge type with (1)/(6) <112> Burgers vectors. Preliminary investigations indicated that a number of other technologically important refractory silicides can all be grown epitaxially on silicon. The results present an exciting prospect to fabricate novel classes of devices with desirable characteristics.
ACCESSION #
9817642

 

Related Articles

  • Nanometer patterning of epitaxial CoSi[sub 2]/Si(100) for ultrashort channel Schottky barrier... Zhao, Q.T.; Klinkhammer, F.; Dolle, M.; Kappius, L.; Mantl, S. // Applied Physics Letters;1/18/1999, Vol. 74 Issue 3, p454 

    Reports on the use of a nanometer patterning method, based on local oxidation of silicide layers, to pattern epitaxial CoSi[sub 2] layers. Feature size obtained; Fabrication of a Schottky source/drain metal-oxide-semiconductor field effect transistor with epitaxial CoSi[sub 2]; I-V...

  • Sequential phase formation by ion-induced epitaxy in Fe-implanted Si(001). Study of their properties and thermal behavior. Behar, M.; Bernas, H.; Desimoni, J.; Lin, X. W.; Maltez, R. L. // Journal of Applied Physics;1/15/1996, Vol. 79 Issue 2, p752 

    Presents a study which examined the epitaxial growth of FeSi[sub2] silicides by using ion-beam epitaxial crystallization of iron-implanted Si(100) samples. Introduction to the sample materials; Methodology; Results.

  • Epitaxy of orthorhombic gadolinium disilicide on <100> silicon. Geröcs, I.; Molnár, G.; Jároli, E.; Zsoldos, E.; Petö, G.; Gyulai, J.; Bugiel, E. // Applied Physics Letters;12/21/1987, Vol. 51 Issue 25, p2144 

    Epitaxial orthorhombic GdSi2 was grown by in situ vacuum annealing of a 50-nm Gd layer on <100> silicon. The epitaxy was proved by x-ray diffraction, electron diffraction, and ion channeling measurements. The lattice mismatch between the orthorhombic GdSi2 and <100> silicon substrate was found...

  • Fabrication and structure of epitaxial Er silicide films on (111) Si. d’Avitaya, F. Arnaud; Perio, A.; Oberlin, J.-C.; Campidelli, Y.; Chroboczek, J. A. // Applied Physics Letters;5/29/1989, Vol. 54 Issue 22, p2198 

    We prepared Er silicide films on (111) Si by (1) deposition of Er and contact reaction at 380 °C or (2) vacuum codeposition of Er and Si maintaining the flux ratio close to 1:2. Subsequent annealing at temperatures up to 900 °C yielded monocrystalline, continuous layers, whose properties...

  • Homoepitaxial growth of CoSi2 and NiSi2 on (100) and (110) surfaces at room temperature. Tung, R. T.; Schrey, F.; Yalisove, S. M. // Applied Physics Letters;11/6/1989, Vol. 55 Issue 19, p2005 

    Homoepitaxial growth of NiSi2 and CoSi2 on (100) and (110) surfaces is demonstrated at room temperature. Codeposition of stoichiometric silicide, by molecular beam epitaxy, onto thin, preannealed silicide layers on Si (100) and (110) leads to single-crystal growth. High quality NiSi2 and CoSi2...

  • Reordering of polycrystalline Pd2Si on epitaxial Pd2Si. Comrie, C. M.; Liu, J. C.; Hung, L. S.; Mayer, J. W. // Journal of Applied Physics;4/1/1988, Vol. 63 Issue 7, p2402 

    Presents a study which examined the reordering of polycrystalline Pd[sub 2]Si on epitaxial Pd[sub 2] during silicide growth. Use of titanium as an inert marker; Discussion on dominant diffusing species in epitaxial Pd[sub 2]Si; Quality of the epitaxial Pd[sub 2]Si.

  • In situ x-ray diffraction study of CoSi2 formation during annealing of a Co/Ti bilayer on Si(100). Selinder, T. I.; Roberts, T. A.; Miller, D. J.; Beno, M. A.; Knapp, G. S.; Gray, K. E.; Ogawa, S.; Fair, J. A.; Fraser, D. B. // Journal of Applied Physics;6/15/1995, Vol. 77 Issue 12, p6730 

    Presents a study which performed an in situ diffraction analysis of epitaxial cobalt silicide formation during annealing of a cobalt/titanium bilayer on silicon(100). Formation of strongly textured phases prior to cobalt silicide nucleation; Methods; Results.

  • Localized epitaxial growth of MnSi1.7 on silicon. Lian, Y. C.; Chen, L. J. // Applied Physics Letters;2/3/1986, Vol. 48 Issue 5, p359 

    Epitaxial MnSi1.7 was grown locally on both (111) and (001)Si. The orientation relationships were found to be [110]MnSi1.7//[111]Si, (220)MnSi1.7//(220)Si and [001]MnSi1.7//[001]Si, (100)MnSi1.7//(400)Si for epitaxy grown on (111) and (001)Si samples, respectively. Three variants of epitaxy,...

  • Ion channeling studies of epitaxial Fe and Co silicides on Si. Schwarz, C.; Onda, N.; Goncalves-Conto, S.; Sirringhaus, H.; von Känel, H.; Pixley, R. E. // Journal of Applied Physics;12/1/1994, Vol. 76 Issue 11, p7256 

    Presents ion channeling studies of epitaxial iron and cobalt silicides on silicon. Description of the strain measurements performed; Factor to which the epitaxial stabilization of the cesium chloride phases is attributed; Technique used to determine the crystalline quality of thick bcc iron and...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics