Localized epitaxial growth of hexagonal and tetragonal MoSi2 on (111) Si

Lin, W. T.; Chen, L. J.
June 1985
Applied Physics Letters;6/1/1985, Vol. 46 Issue 11, p1061
Academic Journal
Both hexagonal and tetragonal forms of MoSi2 (h-MoSi2 and t-MoSi2) were grown epitaxially on (111)Si for the first time. The best epitaxy was obtained in samples annealed at 1050 °C for 1 h. The orientation relationships between epitaxial h-MoSi2 and Si were determined to be [0001]MoSi2//[111]Si and (2020)MoSi2//(202)Si whereas those between epitaxial t-MoSi2 and Si were analyzed to be [110]MoSi2//[111]Si and (004)MoSi2//(202)Si. Regular interfacial dislocations, 100 Å in spacing, were identified to be of edge type with (1)/(6) <112> Burgers vectors. Preliminary investigations indicated that a number of other technologically important refractory silicides can all be grown epitaxially on silicon. The results present an exciting prospect to fabricate novel classes of devices with desirable characteristics.


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