Microstructure of silicon implanted with high dose oxygen ions

Jaussaud, C.; Stoemenos, J.; Margail, J.; Dupuy, M.; Blanchard, B.; Bruel, M.
June 1985
Applied Physics Letters;6/1/1985, Vol. 46 Issue 11, p1064
Academic Journal
Buried implanted oxide layers have been formed by high dose implantation of oxygen ions (3×1018 ions cm-2) into <100> silicon wafers, at a constant temperature of 500 °C. The implanted layers were studied by cross-sectional transmission electron microscopy and secondary ion mass spectroscopy. The defects at both the top Si/SiO2 and the SiO2/bulk Si interfaces are shown to be SiO2 precipitates. The precipitates are unstable and can be eliminated by heat treatment, and a homogeneous top silicon layer with a low density of dislocations can be obtained.


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