Photoluminescence study of InGaAs grown on InP by vapor phase epitaxy—Effects of O2 injection and substrate orientation

Makita, Kikuo; Gomyo, Akiko; Taguchi, Kenkoh; Suzuki, Tohru
June 1985
Applied Physics Letters;6/1/1985, Vol. 46 Issue 11, p1069
Academic Journal
Photoluminescence measurement at 4.2 K was carried out to investigate factors (O2 injection and substrate orientation) influencing incorporation of impurities in the InGaAs growth during hydride vapor phase epitaxy. Purification with reduction of both donor and acceptor impurities in the O2 injected growth was confirmed spectroscopically for the first time. InGaAs growth on (100) InP substrates slightly misoriented to the (110) direction was found to show a significant increase in incorporation efficiency for impurities.


Related Articles

  • Thermal redistribution of localized excitons and its effect on the luminescence band in InGaN ternary alloys. Li, Q.; Xu, S. J.; Cheng, W. C.; Xie, M. H.; Tong, S. Y.; Che, C. M.; Yang, H. // Applied Physics Letters;9/17/2001, Vol. 79 Issue 12, p1810 

    Temperature-dependent photoluminescence measurements have been carried out in zinc-blende InGaN epilayers grown on GaAs substrates by metalorganic vapor-phase epitaxy. An anomalous temperature dependence of the peak position of the luminescence band was observed. Considering thermal activation...

  • Photoluminescence spectra and line-shape synthesis of a conduction-band-to-deep-acceptor transition in GaAs:Sn. Zemon, S.; Vassell, M. O.; Lambert, G.; Bartram, R. H. // Journal of Applied Physics;12/15/1986, Vol. 60 Issue 12, p4253 

    Presents a systematic photoluminescence study of a deep level in liquid-phase-epitaxy-grown GaAs:Sn. Experimental results; Data analysis; Discussion and conclusion.

  • Micro-Raman scattering in laterally epitaxial overgrown GaN. Tripathy, S.; Chua, S. J.; Hao, M. S.; Sia, E. K.; Ramam, A.; Zhang, J.; Sun, W. H.; Wang, L. S. // Journal of Applied Physics;May2002, Vol. 91 Issue 9, p5840 

    In this study, micro-Raman spectroscopy has been used to investigate the vibrational properties of laterally epitaxial overgrown (LEO) GaN. The LEO GaN films were grown by metal organic chemical vapor deposition on a 2 in. sapphire substrate with SiN mask. Photoluminescence and polarized Raman...

  • Photoluminescence of iodine-doped ZnTe homoepitaxial layer grown by metalorganic vapor phase epitaxy. Tanaka, Tooru; Hayashida, Kazuki; Nishio, Mitsuhiro; Guo, Qixin; Ogawa, Hiroshi // Journal of Applied Physics;5/1/2003, Vol. 93 Issue 9, p5302 

    Photoluminescence (PL) properties of I-doped ZnTe homoepitaxial layers grown by atmospheric pressure metalorganic vapor phase epitaxy have been investigated as a function of n-butyliodide (n-BuI) transport rate. The PL spectrum changed drastically even when a low dopant transport rate was used....

  • Photoluminescence study of HgZnTe alloys. Ravid, A.; Sher, A.; Zussman, A. // Journal of Applied Physics;10/1/1990, Vol. 68 Issue 7, p3592 

    Examines the photoluminescence spectra of Hg[sub1-x]Zn[subx]Te layers grown by liquid phase epitaxy on CdZnTe substrates. Experimental techniques; Information on carrier concentration and lifetime; Data on photoluminescence.

  • Electronic and photoluminescent properties of InP prepared by flow modulation epitaxy. Neuhalfen, A. J.; Wessels, B. W. // Journal of Applied Physics;1/1/1992, Vol. 71 Issue 1, p281 

    Epitaxial InP has been prepared by flow modulation epitaxy (FME) over the temperature range of 350-600 °C. The growth and properties of the epitaxial InP were studied as a function of modulation period, reactant partial pressure, and growth temperature. The growth rate was dependent on the...

  • Optical bandgap energy of wurtzite InN. Matsuoka, Takashi; Okamoto, Hiroshi; Nakao, Masashi; Harima, Hiroshi; Kurimoto, Eiji // Applied Physics Letters;8/12/2002, Vol. 81 Issue 7, p1246 

    Wurtzite InN films were grown on a thick GaN layer by metalorganic vapor phase epitaxy. Growth of a (0001)-oriented single crystalline layer was confirmed by Raman scattering, x-ray diffraction, and reflection high energy electron diffraction. We observed at room temperature strong...

  • Photoluminescence of high-quality GaSb grown from Ga- and Sb-rich solutions by liquid-phase epitaxy. Wu, Meng-Chyi; Chen, Chi-Ching // Journal of Applied Physics;11/1/1992, Vol. 72 Issue 9, p4275 

    Presents information on a study which analyzed the temperature dependence of photoluminescence from the high-quality unintentionally doped GaSb layers grown by liquid-phase epitaxy (LPE). Description of the LPE process; Temperature dependence of emission spectra; Variation of the photon energies.

  • Laser action and photoluminescence in an indium-doped n-type Hg1-xCdxTe (x=0.375) layer grown by liquid phase epitaxy. Ravid, A.; Zussman, A. // Journal of Applied Physics;4/15/1993, Vol. 73 Issue 8, p3979 

    Presents information on a study that examined photoluminescence, carrier lifetime and laser oscillation in an indium-doped n-type Hg[sub1-x]Cd[subx]Te layer grown by liquid phase epitaxy on CdZnTe. Methodology of the study; Results and discussion on the study.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics