TITLE

Photoluminescence study of InGaAs grown on InP by vapor phase epitaxy—Effects of O2 injection and substrate orientation

AUTHOR(S)
Makita, Kikuo; Gomyo, Akiko; Taguchi, Kenkoh; Suzuki, Tohru
PUB. DATE
June 1985
SOURCE
Applied Physics Letters;6/1/1985, Vol. 46 Issue 11, p1069
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Photoluminescence measurement at 4.2 K was carried out to investigate factors (O2 injection and substrate orientation) influencing incorporation of impurities in the InGaAs growth during hydride vapor phase epitaxy. Purification with reduction of both donor and acceptor impurities in the O2 injected growth was confirmed spectroscopically for the first time. InGaAs growth on (100) InP substrates slightly misoriented to the (110) direction was found to show a significant increase in incorporation efficiency for impurities.
ACCESSION #
9817636

 

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