TITLE

Effects of substrate temperature on the orientation of ultrahigh vacuum evaporate Si and Ge films

AUTHOR(S)
Chao, S. S.; Gonzalez-Hernandez, J.; Martin, D.; Tsu, R.
PUB. DATE
June 1985
SOURCE
Applied Physics Letters;6/1/1985, Vol. 46 Issue 11, p1089
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Studies of texture in ultrahigh vacuum deposited Si and Ge films show a (220) preferred orientation for the as-prepared polycrystalline films. On the other hand, amorphous silicon (a-Si) followed by thermal crystallization exhibits a (111) orientation when contamination with oxygen is allowed prior to annealing. Oxygen incorporation is only indirectly involved in promoting the (111) preferred orientation via high annealing temperature. Preferred orientation is absent when contamination is avoided. In contrast, thermally crystallized a-Ge films show no preferred orientation regardless of oxygen contamination.
ACCESSION #
9817627

 

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