TITLE

Growth of molybdenum and tungsten on GaAs in a molecular beam epitaxy system

AUTHOR(S)
Bloch, J.; Heiblum, M.; Komem, Y.
PUB. DATE
June 1985
SOURCE
Applied Physics Letters;6/1/1985, Vol. 46 Issue 11, p1092
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Thin films of Mo and W were grown on top of (100) GaAs in a molecular beam epitaxy system. Mo grew epitaxially between 200 and 450 °C with its (111) plane parallel to (100) GaAs plane. W grew as a random polycrystalline deposit. For both metals, interaction with the GaAs occurred during growth at 500 °C. Schottky barrier heights determined by current and capacitance measurements show that the electrical properties of the metal-GaAs interface do not strongly depend on the growth temperature and the microstructure of the films.
ACCESSION #
9817625

 

Related Articles

  • GaAs lateral epitaxial growth over a tungsten grating by molecular beam epitaxy. Kondo, Naoto; Kawashima, Minoru; Ando, Seigo; Oe, Kunishige // Applied Physics Letters;2/15/1985, Vol. 46 Issue 4, p436 

    GaAs lateral epitaxial growth over a tungsten grating is achieved by molecular beam epitaxy. Lateral overgrowth is seeded by epitaxial deposits formed on the GaAs (001) surface openings onto a line and space tungsten grating. The condition of obtaining continuous growth surface is investigated....

  • Molecular beam epitaxial growth of tungsten layers embedded in single crystal gallium arsenide. Harbison, J. P.; Hwang, D. M.; Levkoff, J.; Derkits, G. E. // Applied Physics Letters;12/1/1985, Vol. 47 Issue 11, p1187 

    We have been able to fabricate structures which consist of a thin (∼10 nm) polycrystalline W film embedded in surrounding single crystalline GaAs by molecular beam epitaxy (MBE) using an electron beam evaporation source to deposit W metal in an ultrahigh vacuum MBE growth chamber. The...

  • Transistor action in novel GaAs/W/GaAs structures. Derkits, G. E.; Harbison, J. P.; Levkoff, J.; Hwang, D. M. // Applied Physics Letters;5/5/1986, Vol. 48 Issue 18, p1220 

    Structures containing thin polycrystalline layers of W embedded in essentially single crystal GaAs have been grown by molecular beam epitaxy. The W layers exhibit resistivities of 90–300 μΩ cm and Schottky barriers to both substrate and overgrown GaAs. The structures can act as...

  • Thickness effect on stress-induced exchange anisotropy of NiFe/NiFeMn. Lai, Chih-Huang; Chen, Shing-An; Huang, J. C. A. // Journal of Applied Physics;5/1/2000, Vol. 87 Issue 9, p6656 

    Samples with the structure Mo (20 nm)/NiFe (t nm)/NiFeMn (12 nm)/Mo (2 nm) were grown on the Al[sub 2]O[sub 3] (11–20) substrates by a MBE system. Although no magnetic field was applied during depositions, shifted hysteresis loops were observed in as-deposited samples, which were...

  • Raman spectra of Zn1-xMgxSySe1-y quaternary alloys. Wang, Donghong; Huang, Daming; Jin, Caixia; Liu, Xiaohan; Lin, Zheng; Wang, Jie; Wang, Xun // Journal of Applied Physics;7/15/1996, Vol. 80 Issue 2, p1248 

    Focuses on a study which grew semiconductor quaternary alloys Zn[sub1-x]Mg[subx]S[suby]Se[sub1-y] on gallium arsenide substrates by molecular beam epitaxy. Background on the alloy; Photoluminescent studies of the alloy; Information on light scattering.

  • The Study of Energy Band Gap of InxAlyGa1-x-yN Quaternary Alloys using UV-VIS Spectroscopy. Raof, N. H. Abd.; Ng, S. S.; Hassan, H. Abu; Hassan, Z. // AIP Conference Proceedings;6/1/2009, Vol. 1136 Issue 1, p176 

    Quaternary InxAlyGa1-x-yN alloys with indium (In) mole fraction x ranging from 0.01 to 0.10 and constant aluminum (Al) mole fraction y = 0.06, were grown by molecular beam epitaxy. The energy band gaps of InAlGaN alloys were investigated using UV-VIS spectroscopy under room temperature. The...

  • XRD Analyses of In0.10AlxGa0.90-xN (0≤x≤0.20) Quaternary Alloys. Yusof, Y.; Abid, M. A.; Raof, N. H. Abd; Ng, S. S.; Hassan, H. Abu; Hassan, Z. // AIP Conference Proceedings;7/7/2010, Vol. 1250 Issue 1, p301 

    We present the structural properties of quaternary In0.10AlxGa0.90-xN (0≤x≤0.20) alloys grown on sapphire substrate by molecular beam epitaxy. High resolution X-ray diffraction (HR-XRD) analyses were used to investigate the phase and crystalline quality of quaternary...

  • Thickness effect on stress-induced exchange anisotropy of NiFe/NiFeMn. Lai, Chih-Huang; Chen, Shing-An; Huang, J. C. A. // Journal of Applied Physics;5/1/2000, Vol. 87 Issue 9, p6656 

    Samples with the structure Mo (20 nm)/NiFe (t nm)/NiFeMn (12 nm)/Mo (2 nm) were grown on the Al[sub 2]O[sub 3] (11–20) substrates by a MBE system. Although no magnetic field was applied during depositions, shifted hysteresis loops were observed in as-deposited samples, which were...

  • Dislocation reduction via selective-area growth of InN accompanied by lateral growth by rf-plasma-assisted molecular-beam epitaxy. Kamimura, Jumpei; Kishino, Katsumi; Kikuchi, Akihiko // Applied Physics Letters;10/4/2010, Vol. 97 Issue 14, p141913 

    We investigated the selective-area growth (SAG) of InN by rf-plasma-assisted molecular-beam epitaxy using molybdenum (Mo)-mask-patterned sapphire (0001) substrates, which resulted in the formation of regularly arranged N-polar InN microcrystals. Transmission electron microscopy observation...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics