Mechanisms for fluorocarbon reactive ion beam etching of SiO2 by simultaneous Auger electron spectroscopy measurements

Thomson, D. J.; Helms, C. R.
June 1985
Applied Physics Letters;6/1/1985, Vol. 46 Issue 11, p1103
Academic Journal
Auger electron spectroscopy was used to measure the carbon, fluorine, oxygen, and silicon concentrations on an SiO2 surface under bombardment by fluorocarbon ions. The results include the finding that, for CF+3 ions with energies >750 eV, little carbon is observed on the SiO2 surface, indicating a rapid reaction of the carbon with the oxygen. In addition, analysis of the Si LVV line shape showed the presence of flourinated Si on the surface, which has been inferred but never directly measured by other techniques.


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