TITLE

Ion and radical contributions to hydrogenated amorphous silicon film formation in a dc toroidal discharge

AUTHOR(S)
Sugai, H.; Toyoda, H.; Yoshida, A.; Okuda, T.
PUB. DATE
June 1985
SOURCE
Applied Physics Letters;6/1/1985, Vol. 46 Issue 11, p1048
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Hydrogenated amorphous silicon films are formed in a low-pressure dc toroidal discharge. The good plasma confinement by a toroidal magnetic field ensures considerable growth rate of the films even at a low pressure (0.1–10 mTorr). The contributions of ions and radicals to a-Si:H film growth are clearly separated by the control of substrate bias and gas pressure. The films formed mainly by ion flux indicate large values of optical band gap and hydrogen content, in contrast with films formed by neutral radicals only. In addition, the spectrum of dominant IR absorption is observed to vary with the ratio of ion to radical contributions.
ACCESSION #
9817606

 

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