Ion and radical contributions to hydrogenated amorphous silicon film formation in a dc toroidal discharge

Sugai, H.; Toyoda, H.; Yoshida, A.; Okuda, T.
June 1985
Applied Physics Letters;6/1/1985, Vol. 46 Issue 11, p1048
Academic Journal
Hydrogenated amorphous silicon films are formed in a low-pressure dc toroidal discharge. The good plasma confinement by a toroidal magnetic field ensures considerable growth rate of the films even at a low pressure (0.1–10 mTorr). The contributions of ions and radicals to a-Si:H film growth are clearly separated by the control of substrate bias and gas pressure. The films formed mainly by ion flux indicate large values of optical band gap and hydrogen content, in contrast with films formed by neutral radicals only. In addition, the spectrum of dominant IR absorption is observed to vary with the ratio of ion to radical contributions.


Related Articles

  • Defects in a-Si:H films induced by Si ion implantation. Golikova, O. A. // Semiconductors;Apr99, Vol. 33 Issue 4, p447 

    Undoped a-Si:H films implanted with silicon ions (dose 10[sup 12]-10[sup 14]cm[sup -2], mean energy ε = 60 keV) at room temperature have been studied. The following results of the interaction of such films with ion beams have been established: formation of defects (dangling Si-Si bonds) in...

  • Trap-limited migration of vacancy-type defects in 7.5 keV H[sup -]-implanted Si. Deenapanray, Prakash N. K. // Applied Physics Letters;3/4/2002, Vol. 80 Issue 9, p1577 

    We have investigated the generation and migration of defects in crystalline Si following their introduction at room temperature by low-energy hydrogen ions in a region confined to the near-surface region. The fluence dependence of free carrier compensation and creation of electrically active...

  • Physical mechanisms behind the ion-cut in hydrogen implanted silicon. Ho¨chbauer, T.; Misra, A.; Nastasi, M.; Mayer, J. W. // Journal of Applied Physics;9/1/2002, Vol. 92 Issue 5, p2335 

    Hydrogen implanted silicon has been shown to cleave upon annealing, thus facilitating the transfer of thin silicon slices to other substrates, a process known as "ion-cut." In our experiments 〈100〉 silicon wafers were implanted with 40 keV protons to a variety of ion doses ranging...

  • Hydrogen interaction with implantation induced point defects in p-type silicon. Fatima, S.; Jagadish, C. // Journal of Applied Physics;3/1/1999, Vol. 85 Issue 5, p2562 

    Presents information on a study which investigated the hydrogen interaction with implantation induced point defects and impurities in p-type silicon using deep level transient spectroscopy. Experimental details; Results and discussion.

  • Effect of hydrogen on nanoindentation-induced phase transformations in amorphous silicon. Ruffell, S.; Vedi, J.; Bradby, J. E.; Williams, J. S. // Journal of Applied Physics;Dec2009, Vol. 106 Issue 12, p123511-1 

    The effect of local hydrogen concentration on nanoindentation-induced phase transformations has been investigated in ion-implanted amorphous silicon (a-Si). Elevated concentrations of H ranging from 5×1018 to 5×1020 cm-3, over the depth of indentation-induced phase transformed zones have...

  • Blister formation in ion-implanted GaAs: Role of diffusivity. Collino, R. R.; Dick, B. B.; Naab, F.; Wang, Y. Q.; Thouless, M. D.; Goldman, R. S. // Applied Physics Letters;9/14/2009, Vol. 95 Issue 11, p111912 

    We have investigated the influence of substrate temperature during implantation, Timplant, on blister formation in GaAs:N layers produced by N ion implantation followed by rapid thermal annealing. Similar depths of popped blisters (craters) and damage profiles were observed for both low and high...

  • Effect of hydrogen-ion energy on structure of a-Si:H thin films prepared by ion-beam-assisted sputtering. Huang, Junjun; Wang, Weiyan; Fang, Xuyang; Huang, Jinhua; Tan, Ruiqin; Song, Weijie // Journal of Materials Science: Materials in Electronics;Jul2015, Vol. 26 Issue 7, p4888 

    In this work, hydrogenated amorphous silicon (a-Si:H) thin films were prepared by ion-beam-assisted sputtering, and the effect of hydrogen-ion energy on the structure of a-Si:H thin films were investigated using Raman spectroscopy, Fourier transform infrared spectroscopy, and spectroscopic...

  • Permeation of hydrogen into silicon during low-energy hydrogen ion beam bombardment. Horn, M. W.; Heddleson, J. M.; Fonash, S. J. // Applied Physics Letters;8/17/1987, Vol. 51 Issue 7, p490 

    In this study we examine the permeating of hydrogen into p-type silicon during low-energy hydrogen ion beam bombardment by monitoring boron doping deactivation. This examination is done for various times and two different exposure temperatures. In addition we explore the effect of temperature...

  • Hydrogen ion motion in amorphous silicon solar cells at elevated temperatures. Carlson, D. E.; Rajan, K. // Applied Physics Letters;9/2/1996, Vol. 69 Issue 10, p1447 

    Electric field-enhanced degradation has been observed in amorphous silicon solar cells exposed to intense illumination (45–60 suns) at elevated temperatures (>=160 °C). The front tin oxide contacts of both p–i–n and n–i–p cells darken significantly when a...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics