Temperature dependence of the threshold of GaInAsP/InP surface emitting junction lasers

Uchiyama, Seiji; Iga, Kenichi
May 1985
Applied Physics Letters;5/15/1985, Vol. 46 Issue 10, p930
Academic Journal
A GaInAsP/InP surface emitting (SE) laser has been fabricated with a round mesa structure. The minimum threshold current was 35 mA (77 K) and the operating temperature was raised to -21 °C. The characteristic temperature T0 was 100–120 K near 100 K, but decreased at higher temperatures. This is believed to be caused by the generation of heat at the p-side electrode. Room-temperature operation of the GaInAsP/InP SE laser is expected upon solving the ohmic contact problem.


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