TITLE

Temperature dependence of the threshold of GaInAsP/InP surface emitting junction lasers

AUTHOR(S)
Uchiyama, Seiji; Iga, Kenichi
PUB. DATE
May 1985
SOURCE
Applied Physics Letters;5/15/1985, Vol. 46 Issue 10, p930
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A GaInAsP/InP surface emitting (SE) laser has been fabricated with a round mesa structure. The minimum threshold current was 35 mA (77 K) and the operating temperature was raised to -21 °C. The characteristic temperature T0 was 100–120 K near 100 K, but decreased at higher temperatures. This is believed to be caused by the generation of heat at the p-side electrode. Room-temperature operation of the GaInAsP/InP SE laser is expected upon solving the ohmic contact problem.
ACCESSION #
9817585

 

Related Articles

  • A novel GaInAsP/InP distributed feedback laser. Liau, Z. L.; Flanders, D. C.; Walpole, J. N.; DeMeo, N. L. // Applied Physics Letters;2/1/1985, Vol. 46 Issue 3, p221 

    GaInAsP/InP distributed feedback lasers have been fabricated with a simple new design in which the grating is etched into the top of a mass-transported buried heterostructure. Single-frequency operation with sidemodes lower than - 32 dB and threshold currents as low as 16 mA have been achieved.

  • Period doubling in directly modulated InGaAsP semiconductor lasers. Chusseau, Laurent; Hemery, Eric; Lourtioz, Jean-Michel // Applied Physics Letters;8/28/1989, Vol. 55 Issue 9, p822 

    We report on period doubling in a directly modulated InGaAsP semiconductor laser at 1.3 μm. This behavior is obtained for modulation frequencies between fr and 1.6fr, where fr is the laser resonant frequency measured under weak current modulation. The domain of period doubling as well as the...

  • Chemical beam epitaxial growth of very low threshold Ga0.47In0.53As/InP double-heterostructure and multiquantum well lasers. Tsang, W. T. // Applied Physics Letters;10/20/1986, Vol. 49 Issue 16, p1010 

    We report the successful preparation by chemical beam epitaxy and performance characteristics of Ga0.47In0.53As/InP double-heterostructure (DH) and multiquantum well (MQW) lasers emitting at 1.47–1.72 μm. The very low threshold current densities Jth of 1.3 kA/cm2 and 1.5 kA/cm2...

  • Pressure and Temperature Tuned Semiconductor Laser Diodes. Bajda, M.; Piechal, B.; Maciejewski, G.; Trzeciakowski, W.; Majewski, J. A. // AIP Conference Proceedings;12/22/2011, Vol. 1399 Issue 1, p917 

    We present results of theoretical studies of the pressure and temperature tuned laser diodes (LDs) based on InGaP/AlGaInP heterostructures taking into account mounting-induced strains. Our studies reveal that mounting-induced strains play an important role in the quantitative description of...

  • GaInAsP/InP lasers with etched mirrors by reactive ion etching using a mixture of ethane and hydrogen. Matsui, Teruhito; Sugimoto, Hiroshi; Ohishi, Toshiyuki; Abe, Yuji; Ohtsuka, Ken’ichi; Ogata, Hitoshi // Applied Physics Letters;3/27/1989, Vol. 54 Issue 13, p1193 

    A reactive ion etching method is applied to fabricate mirrors of 1.5 μm GaInAsP/InP mass transport lasers using a mixture of ethane and hydrogen as an etchant. Threshold currents as low as 35 mA are achieved for the 300-μm-long cavity lasers with one etched and one cleaved facet. The...

  • Monolithic two-dimensional arrays of high-power GaInAsP/InP surface-emitting diode lasers. Walpole, J. N.; Liau, Z. L. // Applied Physics Letters;6/16/1986, Vol. 48 Issue 24, p1636 

    Two-dimensional arrays of 16 laser elements have been fabricated using the mass transport process. Good uniformity, low threshold current (typically 11–14 mA per element), and high total cw power (up to 0.27 W at 22 °C) were obtained.

  • Secondary ion mass spectroscopic investigation of GaInAsP/InP laser structures made by metalorganic vapor phase epitaxy regrowth. Harde, P.; Fidorra, F.; Venghaus, H. // Journal of Applied Physics;9/15/1990, Vol. 68 Issue 6, p2632 

    Focuses on the fabrication of buried ridge structure gallium-indium-arsenic-phosphorus/indium phosphide (InP) lasers. Use of secondary ion mass spectroscopy; Effect of reduced crystalline perfection of the InP regrowth; Data on the performance of the lasers and the scanning electron microscope...

  • Deep Fe and intrinsic defect levels in Ga0.47In0.53As/InP. Goetz, K.-H.; Bimberg, D.; Brauchle, K.-A.; Jürgensen, H.; Selders, J.; Razeghi, M.; Kuphal, E. // Applied Physics Letters;2/1/1985, Vol. 46 Issue 3, p277 

    Two deep traps in Ga[sub 0.47]In[sub 0.53]As/InP:Fe at a depth of 110 meV and 150 meV, respectively, are observed for the first time using low-temperature photoluminescence and deep level transient spectroscopy. The dependence of luminescence intensity on the growth process itself (liquid phase...

  • Photoluminescence of organometallic vapor phase epitaxial GaInAs. Fry, K. L.; Kuo, C. P.; Cohen, R. M.; Stringfellow, G. B. // Applied Physics Letters;5/15/1985, Vol. 46 Issue 10, p955 

    The low-temperature photoluminescence (PL) characteristics of undoped organometallic vapor phase epitaxial GaInAs lattice matched to InP have been studied and related to different growth conditions. By varying the excitation intensity, PL transitions due to excitons and donor-acceptor pairs have...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics