Use of a rapid anneal to improve CaF2:Si (100) epitaxy

Pfeiffer, Loren; Phillips, Julia M.; Smith, T. P.; Augustyniak, W. M.; West, K. W.
May 1985
Applied Physics Letters;5/15/1985, Vol. 46 Issue 10, p947
Academic Journal
Post-anneals of short duration at high temperature are shown to improve significantly the quality of CaF2 films on Si (100). An anneal at 1100 °C for 20 s in an Ar ambient reduced χmin, the ratio of backscattered 1.8-MeV 4He+ ions in the aligned to random direction, from 0.26 for an as-grown CaF2 film to 0.03 following the post-anneal. This is the best χmin yet reported for the CaF2:Si (100) system. The post-anneal films also show improved chemical, mechanical, and electrical properties.


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