Effects of substrate temperatures on the doping profiles of Si in selectively doped AlGaAs/GaAs/AlGaAs double-heterojunction structures

Inoue, Kaoru; Sakaki, Hiroyuki; Yoshino, Junji; Yoshioka, Yoshiaki
May 1985
Applied Physics Letters;5/15/1985, Vol. 46 Issue 10, p973
Academic Journal
Electrical properties of selectively doped double heterojunctions with a thin GaAs layer (≤300 Å) grown by molecular beam epitaxy are known to depend significantly on the substrate temperatures during growth. Although samples grown at 530 °C show high electron mobilities and reasonable electron concentrations, much lower mobilities and rather high electron concentrations have been obtained for those grown at 630 °C. Secondary ion mass spectrometry studies have been performed and have revealed that the degraded electrical properties are caused mainly by the surface migration of Si and the subsequent incorporation of Si into the undoped GaAs layer of the quantum well.


Related Articles

  • Carrier Transport Mechanisms of a-GaAs/n-Si Heterojunctions. Aly, N.I.; Ibrahim, A.A.; Riad, A.S. // Egyptian Journal of Solids;2001, Vol. 24 Issue 2, p245 

    Presents a study that investigated the carrier transport mechanisms of amorphous gallium arsenide/n-silicon heterojunctions. Theoretical background; Description of the experimental setup; Results and discussion.

  • Characterization of GaAs/Al[sub x] Ga[sub 1-x] As heterointerface defects by means of capacitive measurememts. Valcheva, E.P. // Applied Physics A: Materials Science & Processing;1997, Vol. 65 Issue 1, p39 

    Heterointerface trap densities are obtained by numerical analysis of capacitance�voltage measurements of GaAs/Al[sub x] Ga[sub 1-x] As heterojunctions grown by liquid-phase epitaxy. Interface states with hiqh concentration, N[sub t] =3�10[sup 11] cm[sup -2] and energy level E[sub c]...

  • Resonant cavity enhanced AlGaAs/GaAs heterojunction phototransistors with an intermediate InGaAs layer in the collector. Ünlü, M. S.; Kishino, K.; Chyi, J-I.; Arsenault, L.; Reed, J.; Mohammad, S. Noor; Morkoç, H. // Applied Physics Letters;8/20/1990, Vol. 57 Issue 8, p750 

    Gain and spectral response of heterojunction phototransistors (HPTs) having a thin (0.1 μm) InGaAs strained absorbing layer in the collector has been investigated. Low dark current ∼ 5 pA (1×10-8 A/cm2) and large optical gain as high as 500 were observed. A resonant cavity composed...

  • Observation of coherent optical phonons in GaAs/Al[sub x]Ga[sub 1-x]As single heterojunctions. Chang, Y.-M.; Chang, N.-A. // Journal of Applied Physics;2/15/2003, Vol. 93 Issue 4, p2015 

    Time-resolved second-harmonic generation was used to generate and detect coherent longitudinal optical phonons in GaAs/Al[sub x]Ga[sub 1-x]As single heterojunctions. Three coherent LO[sub GaAs], LO[sub GaAs-like], and LO[sub AlAs-like] phonons were launched by transiently screening the depletion...

  • Resonant cavity enhancement in heterojunction GaAs/AlGaAs terahertz detectors. Esaev, D. G.; Matsik, S. G.; Rinzan, M. B. M.; Perera, A. G. U.; Liu, H. C.; Buchanan, M. // Journal of Applied Physics;2/15/2003, Vol. 93 Issue 4, p1879 

    The room-temperature absorption and reflection spectra in the range of 5-100 µm (3-60 THz) for multilayer heterojunction interfacial work function internal photoemission (HEIWIP) GaAs/AlGaAs far-infrared (FIR) detectors are presented. Calculated results based on the free carrier absorption...

  • Rectification in heavily doped p-type GaAs/AlAs heterojunctions. Yoffe, G. W. // Journal of Applied Physics;7/15/1991, Vol. 70 Issue 2, p1081 

    Presents a study that performed experimental and theoretical studies of heavily doped p-type single GaAs/AlAs heterojunctions. Description of the AlGaAs material system; Approach adopted to study the heterojunctions; Results.

  • Interface properties for GaAs/InGaAlP heterojunctions by the capacitance-voltage profiling technique. Watanabe, Miyoko O.; Ohba, Yasuo // Applied Physics Letters;4/6/1987, Vol. 50 Issue 14, p906 

    The conduction-band discontinuity ΔEc and interface charge density σ have been studied for GaAs/In0.5(Ga1-xAlx)0.5P heterojunctions, prepared by metalorganic chemical vapor deposition. The dependences of ΔEc and σ on Al composition x were investigated for x from 0 to 1. The...

  • Publisher's Note: "Thin-layer black phosphorus/GaAs heterojunction p-n diodes".  // Applied Physics Letters;9/28/2015, Vol. 107 Issue 13, p1 

    A correction to the article "Thin-layer black phosphorus/GaAs heterojunction p-n diodes" that was published in the September 28, 2015 issue is presented.

  • Effect of impurity trapping on the capacitance-voltage characteristics of n-GaAs/N-AlGaAs heterojunctions. Tan, K. L.; Lundstrom, M. S.; Melloch, M. R. // Applied Physics Letters;2/10/1986, Vol. 48 Issue 6, p428 

    We have studied the capacitance-voltage (C-V) characteristics of Schottky barriers on inverted n-GaAs/N-AlGaAs and normal N-AlGaAs/n-GaAs heterojunctions. Impurities introduced during film growth produced a negative sheet charge of 6.0×1011 cm-2 at the interface of the inverted...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics