TITLE

Dependence of junction formation on substrate in implanted HgCdTe

AUTHOR(S)
Bubulac, L. O.
PUB. DATE
May 1985
SOURCE
Applied Physics Letters;5/15/1985, Vol. 46 Issue 10, p976
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Ion implantation in HgCdTe grown by liquid phase epitaxy on CdTe/Al2O3 and on Bridgman CdTe substrates revealed a dependence of junction formation on the defect and impurity properties of the base substrate evidently transmitted through the epitaxial layer. Techniques such as cathodoluminescence, etch pit count, differential Hall, electron beam induced current, and secondary ion mass spectroscopy led to the following findings concerning junction formation: the carrier concentration distribution in the n region may vary from abrupt to graded, depending on substrate properties; the junction depth and junction carrier profile depend on defect structure in the layer, background impurities, and implant/anneal conditions; in annealed HgCdTe, differences exist in diffusion mechanisms of radiation-induced donors between bulk CdTe substrates and CdTe/Al2O3.
ACCESSION #
9817560

 

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