Dependence of junction formation on substrate in implanted HgCdTe

Bubulac, L. O.
May 1985
Applied Physics Letters;5/15/1985, Vol. 46 Issue 10, p976
Academic Journal
Ion implantation in HgCdTe grown by liquid phase epitaxy on CdTe/Al2O3 and on Bridgman CdTe substrates revealed a dependence of junction formation on the defect and impurity properties of the base substrate evidently transmitted through the epitaxial layer. Techniques such as cathodoluminescence, etch pit count, differential Hall, electron beam induced current, and secondary ion mass spectroscopy led to the following findings concerning junction formation: the carrier concentration distribution in the n region may vary from abrupt to graded, depending on substrate properties; the junction depth and junction carrier profile depend on defect structure in the layer, background impurities, and implant/anneal conditions; in annealed HgCdTe, differences exist in diffusion mechanisms of radiation-induced donors between bulk CdTe substrates and CdTe/Al2O3.


Related Articles

  • Ion dependent interstitial generation of implanted mercury cadmium telluride. Williams, B.L.; Robinson, H.G. // Applied Physics Letters;8/4/1997, Vol. 71 Issue 5, p692 

    Examines the generation of mercury interstitials during ion implantation of mercury cadmium telluride semiconductors. Dependence of the formations on lattice position of implanted elements; Types of interstitials generated by column II and VI elements; Contribution of implant damage recoils in...

  • Boron ion implantation in p-type Hg0.8Cd0.2Te. Kumar, R.; Dutt, M. B.; Nath, R.; Chander, R.; Gupta, S. C. // Journal of Applied Physics;12/1/1990, Vol. 68 Issue 11, p5564 

    Presents a study that examined boron ion implantation in p-type mercury-cadmium-telluride. Description of the single crystals used; Analysis of the atomic/carrier concentration and mobility profiles versus depth for the as-implanted samples; Explanation for the behavior of the carrier...

  • p to n Conversion in SWIR Mercury Cadmium Telluride with Ion Milling. Chandra, D.; Schaake, H. F.; Aqariden, F.; Teherani, T.; Kinch, M. A.; Dreiske, P. D.; Weirauch, D. F.; Shih, H. D. // Journal of Electronic Materials;Jun2006, Vol. 35 Issue 6, p1470 

    Exposure to specific damage introduced by either ion implantation or ion milling converts p-type short wavelength infrared (SWIR) HgCdTe to n-type in a manner similar to the conversions in medium wavelength infrared (MWIR) or long wavelength infrared (LWIR) mercury cadmium telluride. However,...

  • Study of LWIR and VLWIR Focal Plane Array Developments: Comparison Between p-on- n and Different n-on- p Technologies on LPE HgCdTe. Gravrand, O.; Mollard, L.; Largeron, C.; Baier, N.; Deborniol, E.; Chorier, Ph. // Journal of Electronic Materials;Aug2009, Vol. 38 Issue 8, p1733 

    The very long infrared wavelength (>14 μm) is a very challenging range for the design of mercury cadmium telluride (HgCdTe) large focal plane arrays (FPAs). The need (mainly expressed by the space industry) for very long wave FPAs appears very difficult to fulfil. High homogeneity, low defect...

  • p-on- n HgCdTe Infrared Focal-Plane Arrays: From Short-Wave to Very-Long-Wave Infrared. Mollard, L.; Bourgeois, G.; Lobre, C.; Gout, S.; Viollet-Bosson, S.; Baier, N.; Destefanis, G.; Gravrand, O.; Barnes, J.; Milesi, F.; Kerlain, A.; Rubaldo, L.; Manissadjian, A. // Journal of Electronic Materials;Mar2014, Vol. 43 Issue 3, p802 

    This paper reports on recent developments made at the DEFIR joint laboratory on fabrication of planar p-on- n arsenic (As)-ion-implanted HgCdTe photodiodes. Our infrared focal-plane arrays (IRFPAs) cover a wide spectral range, from the short-wave infrared (SWIR) to the very-long-wave infrared...

  • Depth Profiling of Electronic Transport Parameters in n-on- p Boron-Ion-Implanted Vacancy-Doped HgCdTe. Umana-Membreno, G.; Kala, H.; Antoszewski, J.; Ye, Z.; Hu, W.; Ding, R.; Chen, X.; Lu, W.; He, L.; Dell, J.; Faraone, L. // Journal of Electronic Materials;Nov2013, Vol. 42 Issue 11, p3108 

    We report results of a detailed study of electronic transport in n-on- p junctions formed by 150-keV boron-ion implantation in vacancy-doped p-type HgCdTe without postimplantation thermal annealing. A mobility spectrum analysis methodology in conjunction with a wet chemical etching-based surface...

  • Performance Characteristics of Planar Ion-Implantation Isolated Heterojunction, Near-Infrared, and Short-Wave Infrared HgCdTe Devices. Terterian, S.; Chu, M.; Mesropian, S.; Gurgenian, H.; Benson, J. D.; Dinan, J. H. // Journal of Electronic Materials;Jun2004, Vol. 33 Issue 6, p615 

    Two-dimensional near-infrared (NIR) and short-wave infrared (SWIR) HgCdTe arrays have been produced using planar ion-implantation isolated heterojunction (PI3H) device technology. This paper is an extension of an earlier study in which focal plane arrays (FPAs) were fabricated based on...

  • Designers still choose mercury cadmium telluride. Piotrowski, Jozef; Perry, Fred // Laser Focus World;Jul97, Vol. 33 Issue 7, p135 

    Discusses the importance of mercury cadmium telluride as a material for infrared photodetectors. Limits imposed by optical and thermal carrier generation in the narrow-gap base regions; Epitaxila growth techniques; Imaging and non-imaging applications.

  • Hg content of anodic oxide films on Hg1-xCdxTe after heat treatment as measured by 40 MeV-O5+ ion backscattering. Takita, K.; Ippōshi, T.; Murakami, K.; Masuda, K.; Kudo, H.; Seki, S. // Applied Physics Letters;3/31/1986, Vol. 48 Issue 13, p852 

    The Hg concentration of anodic oxide films on Hg1-xCdxTe and its change after heat treatment were investigated by using 40 MeV-O5+ backscattering. Heat treatment in a vacuum for 60 min was performed at various temperatures up to 350 and 400 °C, respectively, for the samples with x=0.19 and...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics