High efficiency, high modulation bandwidth (Ga,Al)As:Te,Zn light-emitting diodes with graded band gap

Leibenzeder, S.; Rühle, W.; Hoffmann, L.; Weyrich, C.
May 1985
Applied Physics Letters;5/15/1985, Vol. 46 Issue 10, p978
Academic Journal
A new (Ga,Al)As light-emitting diode (λmax =660–880 nm) is presented which has several advantages: simple processing, high external quantum efficiencies (up to 12%), and short decay times (down to 12 ns). The importance of photon recycling and reduced self-absorption in the graded band gap is demonstrated.


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