TITLE

High efficiency, high modulation bandwidth (Ga,Al)As:Te,Zn light-emitting diodes with graded band gap

AUTHOR(S)
Leibenzeder, S.; Rühle, W.; Hoffmann, L.; Weyrich, C.
PUB. DATE
May 1985
SOURCE
Applied Physics Letters;5/15/1985, Vol. 46 Issue 10, p978
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A new (Ga,Al)As light-emitting diode (λmax =660–880 nm) is presented which has several advantages: simple processing, high external quantum efficiencies (up to 12%), and short decay times (down to 12 ns). The importance of photon recycling and reduced self-absorption in the graded band gap is demonstrated.
ACCESSION #
9817558

 

Related Articles

  • Linear thermal expansion coefficient determination using in situ curvature and temperature dependent X-ray diffraction measurements applied to metalorganic vapor phase epitaxy-grown AlGaAs. Maaßdorf, A.; Zeimer, U.; Grenzer, J.; Weyers, M. // Journal of Applied Physics;Jul2013, Vol. 114 Issue 3, p033501 

    AlxGa1-xAs grown on GaAs is known to be almost perfectly lattice matched with a maximum lattice mismatch of 0.14% at room temperature and even less at temperatures of 700 °C-800 °C. However, as layer structures for edge-emitting diode lasers exhibit an increasing overall thickness of...

  • Secondary electron dopant contrast imaging of compound semiconductor junctions. Chung, Suk; Wheeler, Virginia; Myers-Ward, Rachael; Nyakiti, Luke O.; Eddy, Charles R.; Gaskill, D. Kurt; Skowronski, Marek; Picard, Yoosuf N. // Journal of Applied Physics;Jul2011, Vol. 110 Issue 1, p014902 

    Secondary electron imaging combined with immersion lens and through-the-lens detection has been used to analyze various semiconductor junctions. Dopant contrast imaging was applied for multi-doped 4H-SiC, growth-interrupted n+/p and n/n+ homoepitaxial interfaces, and an AlGaAs/GaAs p-n junction...

  • Fluidic self-assembly integrates gallium arsenide LEDs to...  // Laser Focus World;Sept94, Vol. 30 Issue 9, p13 

    Reports that the quasimonolithic integration of gallium arsenide light-emitting diodes on silicon wafers have been demonstrated by scientists at the University of California in Berkeley. Technique used by the scientists; Scientists' claim about the invention.

  • Silicon LED is efficient at room temperature. Powell, Paula Noaker // Laser Focus World;May2001, Vol. 37 Issue 5, p26 

    Reports on the prototype silicon-based light-emitting diode (LED) developed by engineering researchers at the Surrey, England-based University of Surrey that is almost efficient at room temperature. Comparison of the nonoptimized silicon-based device to conventional optimized LED; Estimated...

  • 560-nm-continuous wave laser emission from ZnSe-based laser diodes on GaAs. Klude, M.; Hommel, D. // Applied Physics Letters;10/15/2001, Vol. 79 Issue 16, p2523 

    Room-temperature continuous wave (cw)-lasing emission at wavelengths around 560 nm was obtained from ZnSe-based laser diodes grown on GaAs substrates. The wavelengths of the devices are most suitable as lightsources for plastic optical fibers. To achieve this emission wavelength, CdZnSSe quantum...

  • OPTIMIZATION OF WHITE ALL-SEMICONDUCTOR LAMP FOR SOLID-STATE LIGHTING APPLICATIONS. Žukauskas, Artūras; Vaicekauskas, Rimantas; Ivanauskas, Feliksas; Shur, Michael S.; Gaska, Remis // International Journal of High Speed Electronics & Systems;Jun2002, Vol. 12 Issue 2, p429 

    A stochastic method is used to optimize white all-semiconductor lamps composed of tree, four, and five primary light-emitting diodes (LEDs) with Gaussian spectra and realistic line widths typical of AIGalnP and AIGalnP LEDs. Within an optimal set of central wavelengths and relative powers, a...

  • AlGaInP/mirror/Si light-emitting diodes with vertical electrodes by wafer bonding. Horng, R. H.; Huang, S. H.; Wuu, D. S.; Chiu, C. Y. // Applied Physics Letters;6/9/2003, Vol. 82 Issue 23, p4011 

    In a previous study, we reported a highly efficient AlGaInP light-emitting diode (LED) with a (Au/AuBe/SiO[SUB2]/Si mirror substrate (MS) fabricated by wafer bonding, where a planar electrode structure is used. In view of the more efficient epilayer area utilized, AlGaInP/mirror/barrier/Si LEDs...

  • Optically Pumped “Immersion-Lens” Infrared Light Emitting Diodes Based on Narrow-Gap III–V Semiconductors. Aıdaraliev, M.; Zotova, N. V.; Karandashev, S. A.; Matveev, B. A.; Remennyı, M. A.; Stus’, N. M.; Talalakin, G. N. // Semiconductors;Jul2002, Vol. 36 Issue 7, p828 

    Spectral and power characteristics of light emitting diodes (LEDs) for the 3.3- to 7-µm range with GaAs LED pumping are presented. The LEDs consist of narrow-gap In(Ga)As, InAsSb(P), or InAs layers on a n[sup +]-InAs substrate (band width ∼λ[sub max]/10) or on InSb (band width ∼...

  • Surface-emitting spin-polarized In[sub 0.4]Ga[sub 0.6]As/GaAs quantum-dot light-emitting diode. Ghosh, S.; Bhattacharya, P. // Applied Physics Letters;1/28/2002, Vol. 80 Issue 4, p658 

    We report the properties of a spin-polarized In[sub 0.4]Ga[sub 0.6]As/GaAs quantum-dot surface-light-emitting diode with a Ga[sub 0.974]Mn[sub 0.026]As spin injector layer. Spin-polarized holes from this ferromagnetic layer recombine with electrons in the quantum dots to produce circularly...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics