Temperature dependence of the energy gap of InSb using nonlinear optical techniques

Littler, C. L.; Seiler, D. G.
May 1985
Applied Physics Letters;5/15/1985, Vol. 46 Issue 10, p986
Academic Journal
We report the first use of the resonant two-photon photo-Hall effect as a nonlinear optical technique to measure the temperature dependence of the energy gap of InSb. Values of Eg for the temperature range 2–210 K are determined and compared with theoretical predictions and past experimental work. The technique is shown to provide an accurate, straightforward means of measuring Eg as a function of temperature in semiconductor materials.


Related Articles

  • Low frequency pressure modulation of indium antimonide. Hallock, Gary A.; Meier, Mark A. // Review of Scientific Instruments;Jul2012, Vol. 83 Issue 7, p073906 

    A lumped parameter resonator capable of generating megapascal pressures at low frequency (kilohertz) is described. Accelerometers are used to determine the applied pressure, and are calibrated with a piezoelectric sample. A laser diagnostic was also developed to measure the pressure in...

  • Radiative recombination of hot carriers in narrow-gap semiconductors. Pavlov, N.; Zegrya, G. // Semiconductors;Jan2012, Vol. 46 Issue 1, p29 

    The mechanism of the radiative recombination of hot carriers in narrow-gap semiconductors is analyzed using the example of indium antimonide. It is shown that the CHCC Auger recombination process may lead to pronounced carrier heating at high excitation levels. The distribution functions and...

  • Electron Spin Alignment in InSb Type-II Quantum Dots in an InAs Matrix. Mukhin, Mikhail S.; Terent'ev, Yakov V.; Golub, Leonid E.; Nestoklon, Mikhail O.; Meltser, Boris Ya.; Semenov, Alexey N.; Solov'ev, Victor A.; Toropov, Alexey A.; Ivanov, Sergey V. // AIP Conference Proceedings;12/28/2011, Vol. 1416 Issue 1, p34 

    Electronic spin polarization up to 100 % has been observed in type-II narrow-gap heterostructures with InSb quantum dots in an InAs matrix via investigation of circular-polarized photoluminescence at external magnetic field applied in Faraday geometry. Energy spectrum of holes confined in...

  • Magneto-Optical Properties of InSb Semiconductor Heterostructures. Pan, X.; Saha, D.; Sanders, G. D.; Stanton, C. J.; Kasturiarachchi, T.; Edirisooriya, M.; Mishima, T. D.; Doezema, R. E.; Santos, M. B. // AIP Conference Proceedings;12/28/2011, Vol. 1416 Issue 1, p113 

    We have theoretically and experimentally studied the spin-dependent Landau levels for electrons and holes in narrow-gap InSb/AlInSb quantum well systems. We use the envelope function approximation for the electronic and magneto-optical properties of InSb/AlInSb. Our model includes the conduction...

  • Electrical characterization of electron beam evaporated Indium Antimonide thin films. Vishwakarma, Shree Ram; Tripathi, Ravishankar Nath; Verma, Aneet Kumar // Archives of Physics Research;2011, Vol. 2 Issue 2, p100 

    Indium Antimonide thin films of different thickness (300-400) nm, deposited by electron beam evaporation technique on suitable ultrasonically cleaned glass substrates at different substrate temperature (303-373)K ,are of polycrystalline nature having zincblende structure. All deposited films...

  • Quantum Hall effect at cleaved InSb surfaces and low-temperature annealing effect. Masutomi, Ryuichi; Hio, Masayuki; Mochizuki, Toshimitsu; Okamoto, Tohru // Applied Physics Letters;5/14/2007, Vol. 90 Issue 20, p202104 

    The authors have performed low-temperature in-plane magnetotransport measurements on two-dimensional electron systems induced by deposition of Ag at in situ cleaved surfaces of p-type InSb. The quantum Hall effect was observed even at low magnetic fields around 2 T. The surface electron density...

  • n-InSb/GaAs Thin Films for Cryogenic Hall Sensors. Oszwaldowski, M.; Berus, T. // AIP Conference Proceedings;2006, Vol. 850 Issue 1, p1633 

    Basic parameters of Hall sensors obtained from InSb thin films epitaxially grown on insulating GaAs are presented. These sensors show extremely low temperature coefficients of resistance and magnetic sensitivity in a broad range of cryogenic temperatures. Furthermore, they show no Shubnikov-de...

  • Ballistic transport effects in a sub-micron InSb quantum well cross structure. Gilbertson, A. M.; Fearn, M.; Kormányos, A.; Read, D. E.; Lambert, C. J.; Buckle, L.; Ashley, T.; Solin, S. A.; Cohen, L. F. // AIP Conference Proceedings;12/22/2011, Vol. 1399 Issue 1, p325 

    We report the low temperature magnetoresistance properties of an InSb quantum well sub-micron Hall cross with lateral dimensions of 477 nm and active device dimensions of the order of 340 nm. Ballistic transport anomalies are observed in the low field regime including negative bend resistance....

  • Thermoelectric Power of the n-InSb in a Transverse Quantizing Magnetic Field at a Large Temperature Gradient. Gadzhialiev, M. M. // Semiconductors;May2000, Vol. 34 Issue 5, p525 

    The thermoelectric power of the n-type indium antimonide was studied in the transverse magnetic field (0-80 kOe) at T[sub av] = 160 K and different temperature gradients. It was found that the electron component of the thermoelectric power at a small temperature gradient is consistent with the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics