Luminescence line shape broadening mechanisms in GaInAs/AlInAs quantum wells

Welch, D. F.; Wicks, G. W.; Eastman, L. F.
May 1985
Applied Physics Letters;5/15/1985, Vol. 46 Issue 10, p991
Academic Journal
GaInAs/AlInAs single quantum wells have been grown lattice matched to InP substrates by molecular beam epitaxy. The quantum well thicknesses ranged from 15 to more than 100 Ã…. The low-temperature photoluminescence exhibited a monotonically increasing spectral linewidth with decreasing well thickness. Of the several possible broadening mechanisms of the quantum well photoluminescence, two mechanisms were found to dominate: one mechanism for thin wells and one for thick wells. Quantum wells thicker than 50 Ã… were found to have their low-temperature photoluminescence spectra broadened primarily by a transfer of electrons from the AlInAs cladding layers into the GaInAs quantum well. Wells thinner than 50 Ã… had their photoluminescence broadened mainly by interface roughness.


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