Laser writing on a novel bilayer resist structure

Li, Kin; Oprysko, Modest M.
May 1985
Applied Physics Letters;5/15/1985, Vol. 46 Issue 10, p997
Academic Journal
Laser and bilayer resist techniques have been combined to produce a new lithographic process. An argon ion laser operating at 514.5 nm is used to write a mask on the top layer of a novel resist structure. The laser writing process is based on a thermal decomposition mechanism. Flood exposure with deep ultraviolet light is used to replicate the laser generated patterns on the bottom layer, polymethyl methacrylate (PMMA). The bilayer resist structure is insensitive to ambient light and eliminates the interfacial problems usually encountered in photoresist-on-PMMA structures. The process results in clean and well defined features smaller than 2 μm.


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