Continuously graded-index separate confinement heterostructure multiquantum well Ga1-xInxAs1-yPy/InP ridge waveguide lasers grown by low-pressure metalorganic chemical vapor deposition with lattice-matched quaternary wells and barriers

Ludowise, M. J.; Ranganath, T. R.; Fischer-Colbrie, A.
October 1990
Applied Physics Letters;10/8/1990, Vol. 57 Issue 15, p1493
Academic Journal
Continuously graded-index separate confinement heterostructure multiple quantum well (four wells, Lz ∼50 Å) lasers fabricated in the Ga1-xInxAs1-yPy/InP system with lattice-matched quaternary wells (bulk emission wavelength λg=1.39 μm) and barriers (λg=1.2 μm) are reported. A 5-μm-wide ridge waveguide laser operates with laser threshold current Ith=34 mA at room temperature (λ∼1286 nm) with an external differential quantum efficiency of ∼19% per facet and a temperature coefficient T0 ∼40 K. Large-area threshold current density is measured at 1.1 kA/cm2 on a 40×300 μm2 device.


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