TITLE

Infrared absorption study on carbon and oxygen behavior in Czochralski silicon crystals

AUTHOR(S)
Shimura, F.; Baiardo, J. P.; Fraundorf, P.
PUB. DATE
May 1985
SOURCE
Applied Physics Letters;5/15/1985, Vol. 46 Issue 10, p941
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The behavior of carbon atoms in relation to oxygen precipitation in Czochralski silicon crystals subjected to various heat treatments is investigated by means of infrared (IR) spectroscopy. It is shown that carbon atoms enhance and modify oxygen precipitation both at 750 and at 1000 °C. Perturbed [Oi-Ci] C(3) centers, which are unstable at a high temperature (1250 °C), have been observed in the specimen subjected to 750 °C heat treatment by IR spectroscopy. The enhancement effect of carbon atoms is explained in two ways: (i) C(3) centers act as effective heterogeneous seeding sites for oxygen precipitation, and (ii) carbon atoms play a catalytic role by modifying interfacial energies or the point defect ambient at the oxygen precipitate surface.
ACCESSION #
9817537

 

Related Articles

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics