Dependence of critical layer thickness on strain for InxGa1-xAs/GaAs strained-layer superlattices

Fritz, I. J.; Picraux, S. T.; Dawson, L. R.; Drummond, T. J.; Laidig, W. D.; Anderson, N. G.
May 1985
Applied Physics Letters;5/15/1985, Vol. 46 Issue 10, p967
Academic Journal
Various InxGa1-xAs/GaAs strained-layer superlattices have been characterized by Hall effect, ion beam channeling, and photoluminescence measurements in order to evaluate their crystalline quality. Structural characteristics (e.g., layer strains and thicknesses) were obtained from channeling or x-ray diffraction studies. The structures had strains in the alloy layers of 0.5–2.7%. Critical layer thicknesses for degradation of sample quality are in good agreement with the theoretical expression proposed by J. W. Matthews and A. E. Blakeslee [J. Cryst. Growth 27, 118 (1974)]. Our results provide important information for design of strained-layer devices.


Related Articles

  • Simulation of the transient indiffusion-segregation process of triply negatively charged Ga vacancies in GaAs and AlAs/GaAs superlattices. You, Horng-Ming; Gösele, Ulrich M.; Tan, Teh Y. // Journal of Applied Physics;8/15/1993, Vol. 74 Issue 4, p2461 

    Presents a study which examined the triply negatively charged gallium (Ga) vacancy in gallium arsenide (GaAs) and AlAs/GaAs superlattice crystals containing n-type regions. Discussion on substitutional atom difusion problems in crystalline solids; Description of the diffusion-segregation...

  • Criterion for blocking threading dislocations by strained buffer layers in GaAs grown on Si substrates. El-Masry, N. A.; Tarn, J. C. L.; Hussien, S. // Applied Physics Letters;11/13/1989, Vol. 55 Issue 20, p2096 

    An energy model has been used to calculate the minimum critical thickness in strained-layer superlattices that is required to block threading dislocations. The model calculates the total change in the system energy that results from the presence of a bent dislocation segment at the strained...

  • Interactions of dislocations in GaAs grown on Si substrates with InGaAs-GaAsP strained layered superlattices. El-Masry, N. A.; Tarn, J. C.; Karam, N. H. // Journal of Applied Physics;10/1/1988, Vol. 64 Issue 7, p3672 

    Examines the interactions of dislocations in gallium arsenide (GaAs) grown on silicon substrates with InGaAs-GaAsP strained layered superlattices (SLS). Reduction of dislocation density in GaAs grown on silicon substrates; Drawbacks of the heteroepitaxial growth of GaAs on silicon faces;...

  • Nonlinear optical absorption in GaAs doping superlattices. Danner, A. D.; Dapkus, P. D.; Kost, A.; Garmire, E. // Journal of Applied Physics;11/15/1988, Vol. 64 Issue 10, p5206 

    Focuses on a study which measured the direct linear absorption in gallium arsenide doping superlattices. Discussion of crystal growth by metalorganic chemical vapor deposition; Experimental procedures; Changes in absorption for a pump excitation in superlattices.

  • Long-Wavelength Optical Phonons in the ZnTe/Zn[sub 0.8]Cd[sub 0.2]Te Superlattice. Vodop'yanov, L. K.; Kozyrev, S. P.; Sadof'ev, Yu. G. // Physics of the Solid State;Oct2003, Vol. 45 Issue 10, p1990 

    The lattice IR reflection spectra of a ZnTe/Zn[sub 0.8]Cd[sub 0.2]Te superlattice measured at temperatures of 300 and 10 K are analyzed. The ZnTe/Zn[sub 0.8]Cd[sub 0.2]Te superlattice is grown by molecular-beam epitaxy on a GaAs substrate with a ZnTe buffer layer. It is found that the lattice IR...

  • Influence of Si–N complexes on the electronic properties of GaAsN alloys. Jin, Y.; He, Y.; Cheng, H.; Jock, R. M.; Dannecker, T.; Reason, M.; Mintairov, A. M.; Kurdak, C.; Merz, J. L.; Goldman, R. S. // Applied Physics Letters;8/31/2009, Vol. 95 Issue 9, p092109 

    We have investigated the influence of Si–N complexes on the electronic properties of GaAsN alloys. The presence of Si–N complexes is suggested by a decrease in carrier concentration, n, with increasing N-composition, observed in GaAsN:Si films but not in modulation-doped...

  • Electron wave interference device with fractional layer superlattices. Tsubaki, Kotaro; Honda, Takashi // Applied Physics Letters;1/28/1991, Vol. 58 Issue 4, p376 

    Focuses on the fabrication of modulation-doped Al[sub 0.3]Ga[sub 0.7]/GaAs heterostructure electron wave interference devices with fractional layer superlattices. Periods of the fractional layer superlattice in the electron wave interference devices; Occurrence of drain current oscillation due...

  • Observation of resonant and stimulated Raman scattering in ZnSe/CdSe quantum wells grown by.... Chung, H.Y.A.; Uhle, N. // Applied Physics Letters;9/6/1993, Vol. 63 Issue 10, p1378 

    Reports the growth of short period zinc selenide/cadmium selenide strained layer superlattices on (100) gallium arsenide surface by atomic layer epitaxy. Characterization of the superlattice using x-ray diffraction and Raman scattering; Calculation of the superlattice period; Observation of a...

  • Frequency doubling and tripling of terahertz radiation in a GaAs/AlAs superlattice due to frequency modulation of Bloch oscillations. Winnerl, S.; Schomburg, E.; Brandl, S.; Kus, O.; Renk, K. F.; Wanke, M. C.; Allen, S. J.; Ignatov, A. A.; Ustinov, V.; Zhukov, A.; Kop'ev, P. S. // Applied Physics Letters;8/28/2000, Vol. 77 Issue 9 

    We report on frequency doubling and tripling of THz radiation in a voltage-biased GaAs/AlAs superlattice. By use of a corner cube antenna system, radiation from the Santa Barbara free-electron laser (frequency 0.7 THz) was guided into a superlattice mesa element and the second and third harmonic...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics