AlGaAs/GaAs p-i-n photodiode/preamplifier monolithic photoreceiver integrated on a semi-insulating GaAs substrate

Wada, O.; Hamaguchi, H.; Miura, S.; Makiuchi, M.; Nakai, K.; Horimatsu, H.; Sakurai, T.
May 1985
Applied Physics Letters;5/15/1985, Vol. 46 Issue 10, p981
Academic Journal
A fully monolithic photoreceiver circuit incorporating an AlGaAs/GaAs p-i-n photodiode and a GaAs field-effect transistor based transimpedance amplifier has been fabricated in the form of a horizontally integrated structure on a semi-insulating GaAs substrate. Parasitic capacitances of the circuit elements have been minimized in the present monolithic circuit, and a short rise and fall time of 1.0 ns, corresponding to an approximate -3 dB frequency of 300 MHz, has been demonstrated at the internal feedback resistance of 1.3 kΩ. Preliminary measurement of the noise characteristics of the present circuit has exhibited an encouraging value of the equivalent input noise current of 13 pA Hz-1/2 at 300 MHz.


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