TITLE

AlGaAs/GaAs p-i-n photodiode/preamplifier monolithic photoreceiver integrated on a semi-insulating GaAs substrate

AUTHOR(S)
Wada, O.; Hamaguchi, H.; Miura, S.; Makiuchi, M.; Nakai, K.; Horimatsu, H.; Sakurai, T.
PUB. DATE
May 1985
SOURCE
Applied Physics Letters;5/15/1985, Vol. 46 Issue 10, p981
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A fully monolithic photoreceiver circuit incorporating an AlGaAs/GaAs p-i-n photodiode and a GaAs field-effect transistor based transimpedance amplifier has been fabricated in the form of a horizontally integrated structure on a semi-insulating GaAs substrate. Parasitic capacitances of the circuit elements have been minimized in the present monolithic circuit, and a short rise and fall time of 1.0 ns, corresponding to an approximate -3 dB frequency of 300 MHz, has been demonstrated at the internal feedback resistance of 1.3 kΩ. Preliminary measurement of the noise characteristics of the present circuit has exhibited an encouraging value of the equivalent input noise current of 13 pA Hz-1/2 at 300 MHz.
ACCESSION #
9817532

 

Related Articles

  • Long-wavelength photodiodes based on Ga[sub 1-x]In[sub x]As[sub y]Sb[sub 1-y] with composition near the miscibility boundary. Andreev, I. A.; Kunitsyna, E. V.; Mikhaılova, M. P.; Yakovlev, Yu. P. // Semiconductors;Feb99, Vol. 33 Issue 2, p216 

    The possibility of using liquid-phase epitaxy to obtain Ga[sub l - x]In[sub x]As[sub y]Sb[sub 1 - y] solid solutions isoperiodic with GaSb near the miscibility boundary is investigated. The effect of crystallographic orientation of the substrate on the composition of the solid solutions grown in...

  • X-ray response of AlGaAs/GaAs radiation-hardened double-heterostructure photodiode compared to Si:p-i-n photodiodes. Anthes, J. P. // Review of Scientific Instruments;Aug1988, Vol. 59 Issue 8, p1846 

    Requirements for continuous operation of photodiodes in the presence of nuclear radiation has led to the development ora novel AlGaAs/GaAs photodiode. Device structure and semiconductor properties of this design were optimized to balance the need for photodetection at λ = 820 nm against...

  • Infrared photoconductor fabricated with a molecular beam epitaxially grown CdTe/HgCdTe... Yuan, Shixin; He, Li; Yu, Jinbi; Yu, Meifang; Qiao, Yiming; Zhu, Jianmei // Applied Physics Letters;3/4/1991, Vol. 58 Issue 9, p914 

    Describes infrared photoconductors fabricated with cadmium tellurium/mercury[sub 0.64] cadmium[sub 0.36] tellurium abrupt heterostructure grown on a gallium arsenide substrate. Description of the growth procedure, device fabrication, and measurement results; Reduction in interface states and...

  • Subpicosecond characterization of carrier transport in GaAs-metal-semiconductor-metal photodiodes. Lambsdorff, M.; Klingenstein, M.; Kuhl, J.; Moglestue, C.; Rosenzweig, J.; Axman, A.; Schneider, Jo.; Hulsmann, A.; Leier, H.; Forchel, A. // Applied Physics Letters;4/1/1991, Vol. 58 Issue 13, p1410 

    Measures the temporal evolution of the photocurrent in interdigitated GaAs metal-semiconductor-metal Schottky photodiodes in the time domain by photoconductive and electro-optic sampling with subpicosecond resolution. Agreement between experiment and theoretical data obtained by Monte Carlo...

  • Low dark current, planar In[sub 0.4]Ga[sub 0.6]As p-i-n photodiode prepared by molecular beam... Tzeng, Y.C.; Li, S.S.; Lin, Y.W.; Ribas, P.; Park, R.M. // Applied Physics Letters;5/27/1991, Vol. 58 Issue 21, p2396 

    Describes the fabrication of a planar, low dark current and high sensitivity In[sub 0.4]Ga[sub 0.6]As p-i-n photodiode fabricated on a semi-insulating gallium arsenide substrate with the aid of a multistage strain-relief buffer system. Quantum efficiency of the detector; Peak responsivity;...

  • Transit time limited response of GaAs metal-semiconductor-metal photodiodes. Klingestein, M.; Kuhl, J.; Rosenzweig, J.; Moglesture, C.; Axmann, A. // Applied Physics Letters;6/3/1991, Vol. 58 Issue 22, p2503 

    Investigates the response of gallium arsenide (GaAs) metal-semiconductor-metal (MSM) photodiodes at low temperatures in the time domain by photoconductive sampling. Description of the dependence of the response time on temperature by phonon mediated intervalley and intravalley scattering;...

  • Selective regrowth of Al[sub 0.30]Ga[sub 0.70]N p-i-n photodiodes. Collins, C. J.; Collins, C.J.; Li, T.; Lambert, D. J. H.; Lambert, D.J.H.; Wong, M. M.; Wong, M.M.; Dupuis, R. D.; Dupuis, R.D.; Campbell, J. C.; Campbell, J.C. // Applied Physics Letters;10/30/2000, Vol. 77 Issue 18 

    We report on the device performance of selective-area regrown Al[sub 0.30]Ga[sub 0.70]N p-i-n photodiodes. Tensile strain, induced by the lattice mismatch between Al[sub x]Ga[sub 1-x]N and GaN, leads to cracking above the critical thickness in layers with high aluminum concentration....

  • 1.31 μm GaAsSb resonant-cavity-enhanced separate absorption, charge and multiplication avalanche photodiodes with low noise. Sun, X.; Wang, S.; Zheng, X. G.; Li, X.; Campbell, J. C.; Holmes, A. L. // Journal of Applied Physics;1/1/2003, Vol. 93 Issue 1, p774 

    A GaAsSb resonant-cavity-enhanced avalanche photodiode with separate absorption, charge, and multiplication regions has been demonstrated. The peak external quantum efficiency was 36% for device with two pairs of λ/4 MgF[sub 2]/ZnSe layers as the dielectric top mirror and the full width at...

  • Comparison of partially relaxed InGaAs/GaAs based high performance phototransistors. Ghisoni, M.; Sjo¨lund, O.; Larsson, A.; Wang, S. M. // Applied Physics Letters;9/16/1996, Vol. 69 Issue 12, p1773 

    We report on heterojunction phototransistors (HPTs) operating at GaAs substrate transparent wavelengths beyond 900 nm, utilizing a strained InGaAs quantum well based absorbing region. High performances have been measured with responsivities of ≊80 and 200 A/W at 10 and 50 μW,...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics